Lithographic apparatus and device manufacturing method

ABSTRACT

A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50× the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority and benefit under 35 U.S.C. § 119(e) toU.S. Provisional Patent Application No. 61/129,048, entitled“Lithographic Apparatus and Device Manufacturing Method”, filed on Jun.2, 2008, U.S. Provisional Patent Application No. 61/138,685, entitled“Lithographic Apparatus and Device Manufacturing Method”, filed on Dec.18, 2008, and U.S. Provisional Patent Application No. 61/153,529,entitled “Lithographic Apparatus and Device Manufacturing Method”, filedon Feb. 18, 2009. The contents of those applications are incorporatedherein in their entirety by reference.

FIELD

The present invention relates to a method of detection and in particularto a method of stage positioning. The invention further relates to acalibration method for calibrating a stage position of a lithographicapparatus and to a lithographic apparatus. The invention further relatesto obtaining a calibration map for a property of a lithographicapparatus.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In such a case, a patterning device, which isalternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.including part of, one, or several dies) on a substrate (e.g. a siliconwafer). Transfer of the pattern is typically via imaging onto a layer ofradiation-sensitive material (resist) provided on the substrate. Ingeneral, a single substrate will contain a network of adjacent targetportions that are successively patterned. Conventional lithographicapparatus include so-called steppers, in which each target portion isirradiated by exposing an entire pattern onto the target portion atonce, and so-called scanners, in which each target portion is irradiatedby scanning the pattern through a radiation beam in a given direction(the “scanning”-direction) while synchronously scanning the substrateparallel or anti-parallel to this direction. It is also possible totransfer the pattern from the patterning device to the substrate byimprinting the pattern onto the substrate.

It has been proposed to make use of an encoder measurement system inorder to measure a position of a stage (such as a substrate stage orpatterning device stage) in the lithographic apparatus. Thereto, a (e.g.two dimensional) encoder grid is applied to a first part of thelithographic apparatus, while encoder sensors heads are connected to asecond part of the lithographic apparatus. In an embodiment the encodergrid is connected to a reference structure of the lithographicapparatus, while encoder sensor heads are connected to the stage so asto follow its position. In another embodiment the encoder grid isconnected to the stage and the encoder sensor heads are connected to thereference structure. In order to calibrate the encoder measurementsystem, a plurality of calibrations is performed, which may result in along calibration time and may result in loss of accuracy by stitchingtogether the different calibration results for the various frequencybands.

In applications of a lithographic apparatus, marks are used fordifferent detection methods such as alignment and overlay measurements.More detailed information with respect to a substrate and performance ofthe lithographic apparatus is desirable and detecting a relevantproperty is becoming more and more time consuming.

SUMMARY

It is desirable to provide an improved detection method for detecting aproperty of a formed structure on a substrate.

According to an embodiment of the invention, there is provided acalibration method for calibrating a stage position of a stage of alithographic apparatus, the method including: projecting, by aprojection system, a pattern of a patterning device onto a substrate;while moving the substrate relative to the patterning device in a firstdirection so as to extend the projected pattern in the first direction;measuring along the first direction the position of the extendedpattern, in a second direction perpendicular to the first direction; andderiving a calibration of the stage position from the measured positionof the extended pattern.

In another embodiment of the invention, there is provided a lithographicapparatus including: an illumination system configured to condition aradiation beam; a support constructed to support a patterning device,the patterning device being capable of imparting the radiation beam witha pattern in its cross-section to form a patterned radiation beam; asubstrate table constructed to hold a substrate; a projection systemconfigured to project the patterned radiation beam onto a target portionof the substrate, and a control system to control an operation of thelithographic apparatus, wherein the control system is arranged tooperate the lithographic apparatus to: project, by the projectionsystem, the pattern of the patterning device onto the substrate; whilemoving the substrate relative to the patterning device in a firstdirection so as to extend the projected pattern in the first direction;measure along the first direction the position of the extended patternin a second direction perpendicular to the first direction; and derive acalibration of the stage position from the measured position of theextended pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 depicts a lithographic apparatus in which an embodiment of theinvention may be provided;

FIG. 2 depicts a view of a pattern projected onto a substrate, toillustrate a part of the calibration according to an embodiment of theinvention;

FIG. 3 depicts a raster obtained on the substrate according to anembodiment of the invention;

FIG. 4 illustrates the measurement along the pattern projected onto thesubstrate illustrated in FIG. 2;

FIG. 5 a illustrates an image of an alignment sensor output signal inaccordance with an embodiment of the invention, the alignment sensorapplied to measure the pattern depicted in FIG. 4;

FIG. 5 b illustrate an image of an alignment sensor output signal inaccordance with another embodiment of the invention;

FIG. 6 is a microscopic image of an end section of an embodiment of theextended pattern and an alignment mark;

FIG. 7 illustrates an end section of an extended pattern according toanother embodiment;

FIGS. 8 a-d illustrate schematically relative movements of a schematicembodiment of a substrate having an extended pattern with respect to thelithographic apparatus;

FIG. 9 a illustrates a patterning device for forming extended patternsaccording to an embodiment of the invention;

FIG. 9 b illustrates a substrate having extended patterns according toan embodiment of the invention;

FIG. 9 c illustrates another embodiment of a patterning device forforming extended patterns;

FIG. 9 d illustrates another embodiment of a patterning device having apattern of one or more extended lines;

FIG. 10 illustrates schematically a flank scan according to anembodiment of the detection method;

FIG. 11 illustrates an embodiment of a flank scan;

FIG. 12 illustrates schematically a further embodiment of a detail of anextended pattern;

FIG. 13 a illustrates an extended pattern having focal mark units and adiffractive pattern thereof;

FIGS. 13 b and 13 c illustrate a diffractive pattern of an extendedpattern according to the embodiment of FIG. 13 a;

FIG. 13 d illustrates another embodiment of embodiments of focussensitive marks that can be used as a basis for an extended pattern;

FIGS. 14 a and 14 b illustrate schematically embodiments of focussensitive extended patterns;

FIG. 15 illustrates a further embodiment of a patterning device;

FIGS. 16 a-b illustrate schematically a Prefoc/LVT method;

FIG. 17 illustrates an embodiment of a wafer stage interferometricposition measurement arrangement;

FIG. 18 illustrates an embodiment of a wafer stage encoder basedposition measurement arrangement;

FIG. 19A-B illustrate an embodiment of a calibration method, and

FIG. 20A-B illustrate an embodiment of another calibration method.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a lithographic apparatus according to oneembodiment of the invention. The apparatus includes an illuminationsystem (illuminator) IL configured to condition a radiation beam B (e.g.UV or EUV radiation, or any other suitable radiation), a patterningdevice support or support structure (e.g. a mask table) MT constructedto support a patterning device (e.g. a mask) MA and connected to a firstpositioning device PM configured to accurately position the patterningdevice in accordance with certain parameters. The apparatus alsoincludes a substrate table (e.g. a wafer table) WT or “substratesupport” constructed to hold a substrate (e.g. a resist-coated wafer) Wand connected to a second positioning device PW configured to accuratelyposition the substrate in accordance with certain parameters. Theapparatus further includes a projection system PS configured to projecta pattern imparted to the radiation beam B by patterning device MA ontoa target portion C (e.g. including one or more dies) of the substrate W.

The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostaticor other types of optical components, or any combination thereof, todirect, shape, or control radiation.

The patterning device support holds the patterning device in a mannerthat depends on the orientation of the patterning device, the design ofthe lithographic apparatus, and other conditions, such as for examplewhether or not the patterning device is held in a vacuum environment.The patterning device support can use mechanical, vacuum, electrostaticor other clamping techniques to hold the patterning device. Thepatterning device support may be a frame or a table, for example, whichmay be fixed or movable as required. The patterning device support mayensure that the patterning device is at a desired position, for examplewith respect to the projection system. Any use of the terms “reticle” or“mask” herein may be considered synonymous with the more general term“patterning device.”

The term “patterning device” used herein should be broadly interpretedas referring to any device that can be used to impart a radiation beamwith a pattern in its cross-section so as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate, for example if thepattern includes phase-shifting features or so called assist features.Generally, the pattern imparted to the radiation beam will correspond toa particular functional layer in a device being created in the targetportion, such as an integrated circuit.

The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions. The tilted mirrorsimpart a pattern in a radiation beam which is reflected by the mirrormatrix.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. Any use of the term“projection lens” herein may be considered as synonymous with the moregeneral term “projection system”.

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above, or employing a reflective mask).

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables or “substrate supports” (and/or two or more masktables or “mask supports”). One or more additional tables or “supports”may be provided next to the substrate table(s) (or mask table(s)) forother purposes than holding a substrate (or mask). In such “multiplestage” machines the additional tables or supports may be used inparallel, or preparatory steps may be carried out on one or more tablesor supports while one or more other tables or supports are being usedfor exposure.

The lithographic apparatus may also be of a type wherein at least aportion of the substrate may be covered by a liquid having a relativelyhigh refractive index, e.g. water, so as to fill a space between theprojection system and the substrate. Such an immersion liquid may alsobe applied to other spaces in the lithographic apparatus, for example,between the mask and the projection system. Immersion techniques can beused to increase the numerical aperture of projection systems. The term“immersion” as used herein does not mean that a structure, such as asubstrate, must be submerged in liquid, but rather only means that aliquid is located between the projection system and the substrate duringexposure.

Referring to FIG. 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may beseparate entities, for example when the source is an excimer laser. Insuch cases, the source is not considered to form part of thelithographic apparatus and the radiation beam is passed from the sourceSO to the illuminator IL with the aid of a beam delivery system BDincluding, for example, suitable directing mirrors and/or a beamexpander. In other cases the source may be an integral part of thelithographic apparatus, for example when the source is a mercury lamp.The source SO and the illuminator IL, together with the beam deliverysystem BD, if required, may be referred to as a radiation system.

The illuminator IL may include an adjuster AD configured to adjust theintensity distribution of the radiation beam. In addition, theilluminator IL may include various other components, such as anintegrator IN and a condenser CO. The illuminator may be used tocondition the radiation beam, to have a desired uniformity and intensitydistribution in its cross-section.

The radiation beam B is incident on the patterning device (e.g., mask)MA, which is held on the patterning device support (e.g., mask table)MT, and is patterned by the patterning device. Having traversed thepatterning device (e.g. mask) MA, the radiation beam B passes throughthe projection system PS, which focuses the beam onto a target portion Cof the substrate W. With the aid of the second positioning device PW andposition sensor IF (e.g. an interferometric device, linear single ormulti dimensional encoder or capacitive sensor), the substrate table WTcan be moved accurately, e.g. so as to position different targetportions C in the path of the radiation beam B. Similarly, the firstpositioning device PM and another position sensor (which is notexplicitly depicted in FIG. 1) can be used to accurately position thepatterning device (e.g. mask) MA with respect to the path of theradiation beam B, e.g. after mechanical retrieval from a mask library,or during a scan.

In general, movement of the patterning device support (e.g. mask table)MT may be realized with the aid of a long-stroke module (coarsepositioning) and a short-stroke module (fine positioning), which formpart of the first positioning device PM. Similarly, movement of thesubstrate table WT or “substrate support” may be realized using along-stroke module and a short-stroke module, which form part of thesecond positioner PW. In the case of a stepper (as opposed to a scanner)the patterning device support (e.g. mask table) MT may be connected to ashort-stroke actuator only, or may be fixed. Patterning device (e.g.mask) MA and substrate W may be aligned using patterning devicealignment marks M1, M2 and substrate alignment marks P1, P2. Althoughthe substrate alignment marks as illustrated occupy dedicated targetportions, they may be located in spaces between target portions (theseare known as scribe-lane alignment marks). Similarly, in situations inwhich more than one die is provided on the patterning device (e.g. mask)MA, the patterning device alignment marks may be located between thedies.

The depicted apparatus could be used in at least one of the followingmodes:

1. In step mode, the patterning device support (e.g. mask table) MT or“mask support” and the substrate table WT or “substrate support” arekept essentially stationary, while an entire pattern imparted to theradiation beam is projected onto a target portion C at one time (i.e. asingle static exposure). The substrate table WT or “substrate support”is then shifted in the X and/or Y direction so that a different targetportion C can be exposed. In step mode, the maximum size of the exposurefield limits the size of the target portion C imaged in a single staticexposure.

2. In scan mode, the patterning device support (e.g. mask table) MT or“mask support” and the substrate table WT or “substrate support” arescanned synchronously while a pattern imparted to the radiation beam isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT or “substrate support”relative to the patterning device support (e.g. mask table) MT or “masksupport” may be determined by the (de-)magnification and image reversalcharacteristics of the projection system PS. In scan mode, the maximumsize of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

3. In another mode, the patterning device support (e.g. mask table) MTor “mask support” is kept essentially stationary holding a programmablepatterning device, and the substrate table WT or “substrate support” ismoved or scanned while a pattern imparted to the radiation beam isprojected onto a target portion C. In this mode, generally a pulsedradiation source is employed and the programmable patterning device isupdated as required after each movement of the substrate table WT or“substrate support” or in between successive radiation pulses during ascan. This mode of operation can be readily applied to masklesslithography that utilizes programmable patterning device, such as aprogrammable mirror array of a type as referred to above.

The lithographic apparatus includes a metrology device such as analignment sensor for measuring one or more properties of the extendedpatterns while moving the substrate table supporting the substratehaving the extended pattern relative to the metrology device. Themetrology device is arranged to combine a position of the substratetable and/or the substrate with the measured property.

The alignment sensor may be of a vision type (i.e. including a CCDcamera, diodes and interferometers) or of a diffraction based type, suchas disclosed in EP 0906590 or in EP 1 372 040 which are hereby includedby reference in their entirety. Some embodiments require specific typessuch as diffraction based types.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

Hereunder forming the extended pattern and auxiliary elements arrangedto assist reading the extended pattern are first explained. Thereafterseveral embodiments of a method of detecting a property of the extendedpattern are explained. Specific references will be made to an alignmentand calibration method.

In an embodiment a method is provided for calculating a calibration map(1 dimensional, 2 dimensional or multi-dimensional) including detectinga property of an extended pattern in a second direction by moving alongthe extended pattern in a first direction, both directions beinggenerally perpendicular.

An example of an extended pattern is shown in the detail of FIG. 3 asformed on the substrate as shown in FIG. 3, using a patterning device MAas shown in FIG. 2. First, embodiments of the patterning device MA willbe explained, thereafter embodiments of the extended pattern.

Forming the Extended Pattern; Patterning Device

An embodiment of the method and lithographic apparatus includes formingthe extended pattern on the substrate. FIG. 2 depicts a patterningdevice (e.g. mask) MA having a pattern, which pattern is projected ontothe substrate W via a projection system (not shown) and making use of anirradiation source to generate a radiation beam (also not shown in FIG.2) that can be used for forming an extended pattern.

The patterning device MA according to the embodiment of FIG. 2 includesfive equidistant points. In an embodiment the points are separated by adistance equal to the size of the points.

The distance between the points, that is the distance in they-direction, can vary from about 50 nm to 10 mm, in an embodiment about50 nm-0.5 mm. The size of the points can vary from about 50 nm to 10 mm,in an embodiment about 50 nm-0.5 mm. In an embodiment the distance/sizeis within a 1000 nm-0.05 mm range.

In the embodiment according to FIG. 2 the points have a rectangularshape, in an embodiment having the longer length in the x direction.Examples are shown in and will be discussed referring to FIG. 9 a. In anembodiment the points have a square shape. The shape of the points isadapted to form a structure on a substrate, wherein the structure isevenly formed throughout the projected point.

In an embodiment the patterning device MA includes multiple sets ofpoints. The sets of points are clustered at different positions on thepatterning device MA. The sets of points can have different sizes, e.g.different sized points and different distances between in the points. Inan embodiment the centerlines of the set of points are substantiallyparallel. By using different sized points, extended patterns can beobtained having different sized lines. This can allow measuring lensproperties or illuminating device properties with respect toilluminating different sized surface areas on a substrate.

In an embodiment the points of a single set of points are positioned onthe same centerline 20, indicated with a dotted line in FIG. 2. In anembodiment a single set of points includes at least three points, in aspecific embodiment at least five points, and in a particular embodimentat least seven points.

In an embodiment a patterning device is provided in the maskless mode.The maskless patterning device can provide patterns for illuminationthat change during illumination. Within the scope of extended patternsaccording to this application, different embodiments of a masklesspatterning device are feasible. In an embodiment the maskless patterningdevice provided points of variable shape, length and inter-distanceduring illumination.

In an embodiment the maskless mode including a programmable patterningdevice is used for forming an extended pattern by moving the substratetable. In another embodiment the maskless mode including a programmablepatterning device is used for forming an extended pattern without movingthe substrate table. The points of the patterning device are programmedto ‘move’ over the surface of the patterning device. This method willallow forming an extended pattern and detecting a property of the formedextended pattern allowing calibration of the programmable patterningdevice.

FIG. 9 a illustrates a patterning device 30 having a set of differentpatterns for forming an extended pattern according to embodiments of theinvention. Group M1 is a set of rectangular shaped patterns positionedat different angles on the patterning device 30. Sub group M11 can beused to create patterns in a direction x11 by moving a substrate indirection x11. Subgroup of patterns M12 will create extended patterns ona substrate if the substrate is moved according to x12 in a directionperpendicular to group M11. During irradiation three extended patternswill be created simultaneously on the substrate. By illuminating threepatterns simultaneously, three extended patterns having similar errorsin alignment/calibration will be created, that can be scanned for errorsin a subsequent detection method for detecting a property, in particulara property relating to the error in alignment, such as a positioningproperty.

Using pattern groups M13 and M14 three extended patterns can be createdwherein a possible alignment/calibration error in positioning will beshifted with respect to the position along the created extended patternin the directions x13, x14 respectively. This will allow scanning thecreated extended patterns in a subsequent detection method and allowdetection of the repeating error at different positions in therespective directions x13, x14 in the created extended pattern.

A rectangular shaped pattern in the patterning device allows irradiatinga position on the substrate during a longer time span. While thesubstrate W is moved with respect to the patterning device 30, aposition on the substrate will be illuminated linearly dependent onlength L11 (and the velocity of the moving substrate table). If thepattern is longer (L11 is larger), a higher speed of the substrate tableWS is possible, even though a similar exposure energy is irradiated at acertain position of the formed extended pattern. A longer pattern willallow moving the substrate table at higher speed.

Further a possible error (in positioning or the like) will be averagedat the position of the created extended pattern on the substrate. In anexaggerated embodiment a possible error in positioning in the y11direction according to FIG. 9 a, will result in a local widening (andlower exposure) of the formed grid line at the error position. The loweraverage exposure at the position can be a further property of theextended pattern that can be detected in a subsequent detection methodfor detecting a property of the formed extended pattern and subsequentcalibration of a relevant property of the lithographic apparatus.

In the embodiment according to FIG. 9 a extended patterns can be formedon a substrate without intermediate rotation of the substrate stage WSor patterning device MA.

Further, the patterning device 30 according to FIG. 9 a includes a groupM21 and M23 of rectangular shaped lines equidistantly spaced. The lengthof the rectangular shaped elements is the different sets of lines arehowever of different length. During irradiation of groups M21 and M23 bymoving the substrate table in the x21 and x23 direction respectively,results in extended patterns extending in the x21 and x23 directionincluding lines that have been exposed during different time intervals.The right-hand side patterns of M21 will have less illumination than theleft-hand side patterns. These exposure variations in the formedextended marks can be measured in a subsequent detection method. In thesubsequent detection step the exposure variance due to different lengthsof the patterns used in the patterning device can be used forcalibration of Z focus in the lithographic apparatus.

In an embodiment a pattern M4 is used to form an extended pattern ofgrid lines. In this embodiment the formed extended pattern will have avariable diffraction in the direction x4 over the extended pattern dueto different exposure duration of the formed grid lines of the extendedpattern. The slope of the diffractive pattern, similar to FIG. 5 b, willbe slightly different for each zero crossing due to the differentexposure lengths of the formed grid lines.

Another example of a pattern to be used for forming an extended patternaccording to an embodiment of the invention is shown in FIG. 9 a aspattern M3 formed by triangle shaped points. Illumination of thesubstrate using triangle shaped points will result in an extendedpattern of grid lines, wherein each line in itself will show differentexposure properties. In the embodiment according to pattern M3, theformed lines of the extended pattern will have a top side that isilluminated during a much shorter period than the underside of the markis. This will lead to exposure properties present in the formed extendedpattern that can be detected and measured in a subsequent detection stepand that can be used in a subsequent calibration step of a calibrationmethod, e.g. for calibrating Z focus.

Different shaped points are possible for obtaining similar embodimentsfor forming, detecting and calibrating. The points can have a circularform, an hourglass form or similar shapes that have different lengths inthe first (x) direction.

In another embodiment, illustrated schematically in FIG. 9 c, thepatterning device 31 includes one point 32. The one point 32 can be usedfor forming an extended pattern on the substrate formed by a singleline. In the embodiment shown in FIG. 9 c the patterning device 31includes two single points 32, 33. In another embodiment the patterningdevice includes one or several single points separated by a distance ofat least 10× the size of the points. This pattern will, if irradiatedonto a substrate by moving the substrate table WT, form multipleextended patterns of single lines.

By moving a substrate table WT supporting a substrate W with respect topatterning device 31 in direction x31, two extended patterns extendingin direction x31 will be formed simultaneously.

In a different embodiment illustrated in FIG. 9 d a patterning device 35is provided having a pattern of one or more extended lines 36, extendingover a distance that is at least 100× the width of the line. FIG. 9 d isa schematic representation. In an embodiment the extended lines 36extend of 200 mm or more and have a width of 100 nm-10000 nm.

Projection of the extended lines 36 onto the substrate will form anextended pattern onto the substrate. Forming an extended pattern using apatterning device 35 having a pattern of an extended line is beneficialin a specific embodiment of the invention relating to e.g. a method fordetection of and/or correcting for lens-heating, as will be explained inmore detail below.

In an embodiment the extended line 36 includes a modulation in directiony35. This modulation can be a regular modulation such as a wavelikemodulation having a certain wavelength (extending in the x35 direction)and an amplitude extending in the y35 direction superimposed on theextended lines 36.

During the projection, the substrate W is moved in the direction x whilethe patterning device MA is not moving, which causes the pattern to beirradiated onto the substrate W in extended form, in the case of theembodiment according to FIG. 2 as substantially parallel lines as thepattern includes a plurality of e.g. equidistant points.

The x direction can be any direction of the lithographic apparatus. Itcan be any direction of the long-stroke and short-stroke module. Inembodiment the x direction is a direction wherein both long-strokemodules are operated at a generally similar power. Combining bothlong-stroke modules in a single moving direction of the substrate stageWS results in a combined velocity that could be 1,414 times the speed ofa single long-stroke module. This will allow quicker movement of thewafer stage WS and thereby a quicker formation of the extended patternusing the patterning device according to an embodiment similar to FIG.2.

In an embodiment the direction x is substantially perpendicular to thecenterline 20 of the set of points on patterning device MA. In anembodiment the points on the patterning device MA can have aparallelogram shape, wherein the angle of the parallelogram correspondswith the x-direction.

An example of a patterning device 30 having non equidistant lines isshown in FIG. 9 a in the embodiment of the group M2. In FIG. 9 adifferent patterns on a patterning device 30 having a pattern of pointsand in the illustrated embodiment of rectangular shaped lines M22, M24,are shown. Groups M22 and M24 include eight lines of two sets of linesat similar distance. Groups M22 and M24 can be used to form extendedpatterns of non-equal distances grid lines.

In an embodiment an extended pattern is formed in two steps. In anembodiment in a first step a pattern device is provided having half ofpoints of the pattern according to any of the embodiments illustrated inFIGS. 2, 9 a, 9 d, and in a second step the other half of the points ofthe pattern is provided. By forming an extended pattern in two steps anextended pattern is created having overlay errors that can be detectedin a subsequent detection step and that can be calibrated in asubsequent calibration step.

In an embodiment a double lined grid pattern similar to groups M22 andM24 is used for performing the two stepped formation of an extendedpattern, wherein first the gridlines of a first extended pattern areformed and in a second step the grid lines of the other extended patternis formed.

Forming the Extended Pattern; Substrate

The formed pattern formed either by moving the substrate table WT withrespect to the patterning device MA according to FIG. 2, or byprojecting a pattern in the form of an extended line onto the substrate,generally extends in the first direction, in this application indicatedby an x-direction.

In an embodiment grid lines extending in a first direction are formedusing a pattern of equidistant points as shown in FIG. 2. In anembodiment the points are non equidistant and the formed pattern issimilarly non equidistant.

Thus, the projected positions according to the embodiment of FIG. 2 areextended in the direction of movement of the substrate (table) to forman extended pattern, in this example providing substantially parallellines. Using this technique, a raster may be created on the surface ofthe substrate, as schematically indicated in FIG. 2.

The substrate table WT is moved in the first direction with a generallyconstant velocity. In particular forming the extended pattern is startedonly after accelerating the substrate table to the desired constantvelocity and illumination is stopped before the substrate table isdecelerated. The constant velocity in the first direction results in aconstant illumination per irradiated area of the substrate W.

In a further embodiment an extend pattern formed on the substrate Wincludes a discontinuous line or discontinuous (grid) lines. Such adiscontinuous extended pattern can be formed by moving the substratetable WT in a first direction an switching the illumination on and off.Use can be made of a pulsed laser source.

When illumination is off during formation of the discontinuous extendedpattern, a dynamical property of the lithographic apparatus can bechanged, e.g. the moving speed of the substrate table or the power(dose) of the illumination system.

The substrate table WT might be accelerated/decelerated whileilluminating the extended pattern. This will result in a dose variationalong the first direction of the extended mark. This can be used todetermine the optimal dose for a certain type of mark or structure.

In order to create lines in the direction y according to the embodimentshown in FIGS. 2 and 3, the patterning device may be rotated by 90degrees (or alternatively another patterning device or other part of thesame patterning device may be applied), while during the irradiation,the substrate is moved along this y direction so as to extend thepattern along the y direction as shown schematically in FIG. 3. Asillustrated in the enlarged, more detailed view of a part of the raster,each of the lines of the raster includes a plurality of substantiallyparallel lines, in order to achieve the response image as illustrated inFIG. 5 a or 5 b, as will be explained in more detail below. According tothe invention it is not necessary for the second extended patternsaccording to FIG. 3 to extend exactly perpendicular to the firstextended patterns.

The pattern may further be projected on the substrate while moving thesubstrate in the second direction so as to extend the projected patternin the second direction, and this extended pattern may be measured alongthe second direction in order to measure the position of the extendedpattern in the first direction. Thereby, deviations in both x and ydirection may be detected and calibrated. In this manner a detectionmethod is possible allowing detection of a relevant property in multipledirections and in particular a multidirectional calibration is possible.

An example of a formed pattern on a substrate W2 having non equidistantlines is shown in FIG. 9 b. Substrate W2 is illustrated in FIG. 9 bshowing different extended patterns G11 and G22 that can be formed usinga patterning device 30 having a pattern of points or rectangular shapes.

In an embodiment a substrate W2 as shown in FIG. 9 b is formed, havingmultiple extending patterns. Group G22 includes extended patterns ofdifferent lengths including in the shown embodiment four lines or eightlines. The extended patterns formed by four lines are equidistant. G22further includes double extended patterns including two groups ofequidistant grid lines. The double extended pattern can be formed in twostrokes or can be formed using a single pattern in the patterning deviceincluding similarly spaced points of two equidistant sets of points.

FIG. 9 b further shows a group G11 including four groups of threeextended patterns formed on the substrate W2. Group G11 includes threeextended patterns, extending in the x11 direction. Each of the extendedpatterns of group G11 can be formed using the same pattern of fourpoints in the patterning device, moving the substrate table WT indirection x11 while irradiating the pattern M1, and moving the substratetable WT in order to form the second and third extended pattern of thegroup G11.

In another embodiment the pattering device includes a set of threegroups consisting each of four points. In this embodiment the completegroup G11 is formed in a single stroke along x11 of the substrate tableWT with respect to the patterning device MA. Such an embodiment isbeneficial as the three extended patterns are formed during exposureeach having the same or substantially the same errors, e.g. due toexposure grid errors in the positioning system. During measurement of aproperty of the extended patterns, three separate measurements can beperformed for each of the extended patterns on the group. Although thesemeasurements can each suffer from different positional errors, resultingfrom e.g. measure side grid encoder errors, the same exposure error ispresent in each of the extended pattern and a suitable filter(combination/convolution) can be used to extract the exposure griderrors from the recorded data. An example of such a technique is shownin U.S. Pat. No. 7,102,736 that is included by reference in itsentirety.

Other groups within the G1 group can be formed in a similar fashioneither by rotating the patterning device in order to position the groupof points in the respective directions of the formed extended patternsor by rotating the substrate table. In an embodiment the patterningdevice 30 includes the points extending in different directions such asgroup M1.

In another embodiment the patterning device includes four groups ofpoints arranged along a centerline extending in directions y11, y12, y13and y14 according to FIG. 9 b and the patterns on the substrate W2 areformed with rotation of the substrate table WT or patterning device MA.

In an embodiment groups of extended patterns on the substrate W areformed in a single operation in the expose stage of the lithographicapparatus. As the substrate W is exposed under the patterning device anyerrors in e.g. an encoding system for positioning the wafer table WTwith respect to the patterning device are converted in errors of theextended pattern formed on the wafer and in the case of forming a groupof extended patterns, in errors in these groups.

In an embodiment of a lithographic apparatus, during irradiation of thepattern onto the substrate, the substrate is moved, and a position ofthe substrate table is measured with a positioning device such as aninterferometer, encoder-based or a photodiode (CCD) system. In anembodiment the substrate table is controlled by setting the positionusing the encoder/interferometer. As a consequence, inaccuracies,deviations in the encoder grid, in particular the expose encoder grid,may translate into deviations of the lines of the raster as created onthe substrate. An example of such deviation of the line is depicted inthe enlarged and schematic view in FIG. 3. As a result of moving thesubstrate table with respect to the patterning device and in particularwithout moving the patterning device, the extended pattern formed on thesubstrate will follow any errors which are caused by positional encodingerrors during movement of the substrate table.

In an embodiment the extended pattern of double gridlines G22 is formedin a single operation by illuminating M22 according to FIG. 9 a. Inanother embodiment the double gridline pattern G22 is formed in twosteps wherein first equidistant grid lines of a first group are formedand thereafter equidistant groups of a second group creating the doublegridline extended pattern G22. A schematic detail of a double extendedpattern is shown in FIG. 12.

In a first step, extended pattern 90 is formed. In a second step,possible at a very much later stage, the second extended pattern 91 isformed. As a result of a positional error (overlay error or stitchingerror) the gridlines of the second extended pattern are shifted.

G22 is an example of stitched marks formed using the extended patterntechnique. By stitching two extended patterns an expose error can bemeasured continuously, making all sorts of interpolations obsolete. Thiscan be used for both calibration by printing two lines in each other andas maintenance test by stitching a second layer on a calibrationsubstrate which already contains extended pattern(s).

In an embodiment the overlay pattern (second formed extended pattern)includes the same equidistant lines. As a result of overlay errorshowever an extended pattern according to G22 is formed. In a subsequentdetection method the shift of the second pattern with respect to thefirst pattern can be measured and subsequently corrected for.

In another embodiment, using a patterning device 35 according to theembodiment shown in FIG. 9 d, the extended pattern including at leastone line and in particular at least a few lines and preferably gridlines, is formed using a patterning device including an image of theline, lines and/or grid lines. If the patterning device 35 is usedrepeatedly, lens heating can occur and the extended pattern formed onthe substrate is formed as a result of the lens heating error, e.g. alsoshowing deviations comparable to the deviations as shown in enlargedview of FIG. 3.

Within the scope of the invention, for any application an errorresulting from any parameter relevant in the irradiation step can betranslated onto the extended pattern formed on the substrate. Examplesof relevant parameters are: substrate table properties such aspositioning and relative positioning, but also illumination driveneffects such as lens heating, reticle heating and wafer heating, dosecontrol, focus during exposure. A further relevant parameter that couldbe measured/calibrated using the extended patterns according to any ofembodiments is substrate clamping during exposure.

In an embodiment of the invention, any pattern may be applied to projectand form the extended pattern(s) onto the substrate, such as a point,etc. Making use of the plurality of points spaced apart in a directionsubstantially perpendicular to the direction of movement of thesubstrate, a pattern of a plurality of parallel lines is created, whichallows a highly sensitive detection by an alignment sensor, e.g. makinguse of interferometric detection principles or CCD camera techniques.Making use of the alignment sensor allows performing the calibrationmaking use of existing and accurate sensors of the lithographicapparatus. Alternatively, other position sensing devices to detect theposition of the line ((CCD) camera techniques) or parallel lines alongits length may be applied.

In an embodiment a reference substrate is formed having a predefined setof extended patterns formed according to a predefined set of parameters,using e.g. combination of setting of a patterning device according toany of the above described embodiments. Such a substrate can be used forcalibrating a lithographic apparatus.

In a further embodiment such a reference substrate can be exposed in asubsequent step forming further extended patterns. Further extendedpatterns can be formed on the reference substrate, and in a subsequentdetection method and/or calibration method e.g. overlay errors can bedetected and corrected for.

An extended pattern according to an embodiment extends in a firstdirection and can include two or more grid lines, but a single line canbe an extended pattern within the scope of the invention too. Asubstrate can include multiple extended patterns. Further the one ormore lines can have a varying width and/or can have actively generateddeviations in a second direction, perpendicular to the first direction.A structure formed on the substrate is an extended pattern if itincludes at least one line extending generally in a first directionhaving a length of at least 35×, in a further embodiment at least 100×,in an even further embodiment at least 200× times the cross-sectionallength of the line.

An extended pattern is in an embodiment created by illuminating apatterning device having points and moving the substrate table WT in thefirst direction.

In an embodiment the extended pattern on a substrate has a length in thefirst direction of close to the width of the substrate at that location.

In an embodiment a reference substrate W includes at least two extendedpatterns extending in different directions and extending over a largerpart of the substrate W.

A practical balance between calibration time and density of calibrationdata may be achieved when a raster having a pitch of substantially 8micrometers or 0.5 millimeters is chosen, although other pitches may besuitable equally well depending on substrate size, calibration speed,required accuracy, etc.

Forming Special Purpose Patterns

In an embodiment an extended pattern is used for obtaining a calibrationmap, preferably a two dimensional calibration map for a specific nonXY-property of the lithographic apparatus such as z-grid calibration.Non-XY-properties are properties related to another aspect of thelithographic apparatus than primary positional properties such as X andY coordinates as well as Rz positioning. An example of a non-XY-propertyis a secondary positional property such as Z-coordinate positioning.

In an embodiment a special extended pattern is formed in accordance tothe method of forming an extended pattern in order to allow obtainingsuch a calibration map for the desired property. The special extendedpattern is formed using a specific step to allow measuring the desiredproperty. A specific step can be an additional step in the method forforming the extended pattern, such as adding a wedge during exposure ora particular pattern for forming the extended pattern, as will beexplained in detail hereunder. In some embodiments similar measurementsteps as with respect to a ‘normal’ extended pattern allow measuring thespecial parameter.

In an embodiment a special measurement tool is used to detect aparameter related to the desired property. In both embodiments theextended pattern allowing detection of a special, non XY-property, canbe formed using embodiments or combinations of features according to anyof the steps disclosed herein. The special property can be a focusparameter such as Z or Rx or Ry.

In an embodiment the formed extended pattern can include focal markproperties which will allow a single shot focal method. A single shotfocal method is known from U.S. application number 60/996,506, thedocument incorporated by reference in its entirety herein.

In an embodiment, shown in FIG. 13 a, the extended pattern 119 includesa main line 120 and several adjacent fine lines 121. In this embodimentof a special extended pattern, the main line 120 and fine lines 121extend in the first direction x110 and are formed using a suitablepatterning device, while moving the substrate table during illumination.The special extended pattern can extend over a large part of thesubstrate. The special extended pattern is formed using any of thedisclosed methods or equivalents thereof.

The fine lines 121 have a smaller width than the main line, the widthextending generally in the second direction, here y110. In an embodimentthe main line 120 has a width L120 in the order of 5 μm, specifically5.8 μm, while the fine lines 121 have a width in the order of 20-1000nm, in an embodiment 40-600 nm and in a specific embodiment 50-400 nmand specifically 0.2 μm. The number of fine lines is four to thirty, inan embodiment ten to twenty, specifically eighteen. A combination of amain line and one or more adjacent fine lines shall be referred to as afocal mark unit. In an embodiment a focal mark unit includes severalmain lines 120. In an embodiment the unit of a main line and fine linesis formed in a pattern ten to thirty times adjacent one to another,specifically seventeen times.

The extended pattern can include two or more adjacent focal mark units.The focal mark units extend in the first direction, the direction ofmovement of the substrate table during exposure. The focal mark unitscan extend over a large length in the first direction, e.g. at least40×, in an embodiment at least 80× the width of the focal mark unit.

The focal mark unit, including main lines and per main line severaladjacent fine lines, can have a width L119 in the order of 5-50 μm. Inthe formed special extended pattern the width extends in the seconddirection. In an embodiment the extended pattern includes several focalmark units parallel and next to each other at equal mutual distance inthe second direction, a direction generally perpendicular to the firstdirection of the extended pattern. In the embodiment according to FIG.13 a, the mutual distance L119 between the units in the second directioncan be 10-50 μm, preferably about 15-20 μm.

During exposure, the main line 120 is formed generally independent offocus, similar to known marks used in the art. The main line 120 havinga size that is generally large with respect to the resolution of thelithographic apparatus is an example of a standard alignment structure.

The fine lines 121 however are examples of focus sensitive marks thatare formed during exposure dependent on the focus of the exposure. Ifthe exposure is out of focus, the fine lines 121 are formed, if any,only partly. The fine lines can have a width in the order of the desiredresolution of the lithographic apparatus.

Finer lines will be more sensitive to focus. The better in focus, themore fine lines will be formed. The width of formed fine lines is anindication of the local focus during exposure. In an embodiment a set offine lines of different widths will allow in a subsequent measurementstep obtaining a parameter related to the local focus.

In an embodiment fine lines 121 include a set of lines that havedifferent line widths. In an embodiment the adjacent fine lines in sucha set are positioned next to each other in an order having an increasingor decreasing line width. With decreasing line width, the fine lines 121become more sensitive to focus. The focus sensitivity is measurable e.g.by measuring diffractive properties, as will described in detailhereunder.

An extended pattern including several focal mark units having linesextending in the first direction and positioned adjacent to one anotherin the second direction, will result in a diffractive pattern in thesecond direction, wherein the position of maximum intensity of thediffractive pattern will depend on the local focus, especially of theformed fine lines. The diffractive properties can be measured and usedto create a calibration map.

A focal mark unit can be formed using a patterning device havingsuitable points therefore, wherein the substrate is moved in the firstdirection, the points formed adjacent to one another in the seconddirection.

In this embodiment the patterning device can include a collection offocal mark units, wherein in the embodiment according to FIG. 13 a, eachfocal mark unit in the patterning device includes one main point andseveral fine points, the points positioned adjacent to one another inthe second direction. Other focal mark units are also possible. The finepoints can be points of different size, in particular of different widthin the second direction. During exposure and subsequent movement of thesubstrate table in the first direction, the points will illuminate apattern extending in the first direction, forming a focus sensitiveextended pattern.

An example of a patterning device for forming a single focal mark unitis shown in FIG. 15. Patterning device 150 is shown having points 151and 152 for forming the main line 120 and fine lines 121 respectivelyduring illumination and similar moving of the substrate table WT in thefirst direction, in FIG. 15 indicated with x150 Main point 151 has awidth 156 for forming a main line 120 having the desired width. Points152 have a width extending in the second direction for forming thedesired fine lines having smaller widths.

Fine point 153 has a larger width than fine point 154. Although fourfine points 152 are shown, it will be clear that more points arepossible.

In an embodiment fine points 152 and especially fine point 154 extendsmore in the first direction x150 than in the second direction allowing alonger illumination of the substrate during exposure. Due to a longerlength in the first direction than in the second direction, the relevantpart of the substrate will be exposed for a longer time. This canenhance the forming the fine structures.

The embodiment of an extended pattern according to FIG. 13 a is anexample of a focus sensitive extended pattern including a single focussensitive grating. Such a single grating can also be used for read-outin a special measurement tool, such as a scatterometry system. Withinthe scope of the invention lie further embodiments known by the skilledman of single focus sensitive gratings applied to a substrate accordingto the method of forming an extended pattern, allowing focus measurementand subsequent calibration.

Another example of a focus sensitive extended pattern is a patternincluding a mark having a wide line in combination with fine lines suchas FOCAL marks (partially chopped lines), see FIG. 13 d, left hand side,or a pattern including PreFoc/LVT marks. A PreFoc/LVT mark can be astandard alignment mark (for extended patterns points in the patterningdevice) illuminated by non-telecentric light created by wedges on top ofthe mark on the patterning device. A pattern of PreFoc/LVT marks isillustrated in FIG. 13 d on the right hand side. A patterning device asdescribed above can be used in a similar fashion to form the extendedmark. As a result of the wedge the extended pattern will be focussensitive. The formed focus sensitive extended pattern can have anegative or positive sensitivity.

An example of simple FOCAL marks and of LVT marks are illustrated inFIG. 13 d. FOCAL marks are shown on the left-hand side includingmultiple sets of a focal mark unit formed by a wide line and fine lines.Two focal mark units are shown in detail in the encircled part. Thefirst direction extends in the direction of the lines, in the figurefrom left to right.

Using the patterning device having a suitable pattern and moving thesubstrate while exposing the pattern can be used to form an extendedfocus sensitive pattern, wherein focus sensitivity results in a XYdisplacement. As a result of ‘bad’ focus, the extended pattern formedusing a point or another similar shape in the patterning device, willshow displacement.

In an embodiment focus sensitive extended patterns are formed in twogenerally perpendicular directions on the substrate. This allowsobtaining Z calibration, as well as Rx and Ry calibration.

In an embodiment a focus sensitive exposure of a patterning deviceresults in an extended pattern extending in the first direction andhaving focus sensitive displacement in the second direction. Preferablythe focus sensitive displacement is in the second direction only.However this is not necessary.

In an embodiment a focus sensitive extended pattern is formed incombination with a standard extended pattern. In an embodiment thedifferent extended patterns are formed in a single operation, during thesame movement of the substrate table in the first direction. FIG. 14 aillustrates schematically an extended pattern having a standardalignment extended pattern 130 and a focus sensitive extended pattern131.

Focus sensitive extended pattern 131 formed on the substrate ispositioned as a result of a combination of errors during exposure.Similar to the ‘normal’ extended pattern 130, the focus sensitiveextended pattern extends generally in the first direction x130 and willshow displacements in the second direction y130 as a result of griderrors or other causes. Further focus sensitive extended pattern 131 isdisplaced at least partially in the second direction y130 as a result offocus errors. As a result of height variations (z-direction in a xyzcoordinate system for a substrate table), the focus sensitive extendedpattern will show additional displacements. The additional displacementcan be measured with respect to the ‘normal’ extended pattern 130 andcan be filtered out, resulting in a calibration map for height variationand exposure calibration.

FIG. 14 b illustrates schematically an extended pattern including twofocus sensitive extended patterns 132 and 133, wherein the extendedpattern 132 has a negative focus sensitivity and pattern 133 has apositive sensitivity. Both patterns are preferably formed in a singleoperation. Any focus errors will be shown mirror symmetrically withrespect to the half way line in between the adjacent extended patterns,while XY-encoder errors result in a similar shift in both extendedpatterns.

The focus sensitive extended patterns can be formed in at least twodirections over the surface of the substrate similar to the embodimentshown in FIG. 3. This will allow to obtain a two dimensional map forfocus calibration of the substrate.

Repeating Forming the Extended Pattern

In an embodiment of a method for calibrating the method includes formingmultiple extended patterns in subsequent runs. An extended pattern isformed several times. In an embodiment the same extended pattern isformed multiple times. The same extended pattern is formed using apatterning device with a similar arrangement. A similar set of points inthe patterning device is used repeatedly.

In a further embodiment a special purpose extended pattern is repeatedlyformed in subsequent steps of the method. This will allow obtaining ameasurement results for each of the multiple extended patterns and willallow repeating a calibration and in particular averaging calibrationresults for obtaining better results.

In a further embodiment the repeated steps for forming the extendedpattern are performed under slightly different circumstances, inparticular with a different lithographic apparatus set up. Differentsetup parameters for the lithographic apparatus can be used whileforming a similar extended pattern. Preferably the same extendedpattern, using the same patterning device is repeated under differentset up parameters. In an embodiment several, e.g. ten extended patternsare formed adjacent to each other.

The formed extended patterns can be formed with different Z set up. Theheight parameter of the substrate table is adjusted using the set upmodules of the lithographic apparatus such that the substrate table WTis arranged at different heights during exposure and subsequent movingof the substrate table during exposure. This allows forming extendedpatterns formed with different setup parameters and allows obtaining amore specific calibration for a parameter.

Repeating forming a special purpose extended pattern is preferablycombined with variations in the set up of the parameter to be calibratedwith the special purpose extended pattern. By varying Z during differentexposures of extended patterns, these extended patterns are formed underdifferent Z setup circumstances and these extended patterns will allowmeasuring the results of the different setup circumstances. When e.g.LVT marks are formed, the shift of the resultant LVT mark extendedpattern will differ as a result of the varying of the Z set up. Thisallows further detailed setup tuning/calibration of the lithographicapparatus.

In an embodiment the extended patterns formed using these repetitivesteps for forming the extended patterns at different positions withdifferent setup, can be regarded as calibration fields. Further theseextended patterns formed with different setup allow obtaining animproved relation between the readout and the parameter to becalibrated, in a specific embodiment between a horizontal shift and theZ, Rx and Ry parameters.

An Extended Pattern on the Substrate Table

In an embodiment an extended pattern is formed and positioned on thesubstrate table. This allows direct detection of a property of theextended pattern and therefore of the substrate table WT. The extendedpattern can be formed on a substrate that is positioned onto thesubstrate table outside the supporting device for support the substrate.The substrate (table) W(T) includes the extended pattern(s) as referencemarks.

The extended pattern on the substrate table can be (or was) formed usingany of the techniques described above.

In an embodiment the extended pattern on the substrate table is formedin an operation after installing the lithographic apparatus at itsoperation facilities. The extended pattern can be used for maintenanceduring operation. The extended pattern can be used for on-sitecalibrations, in particular positional calibrations.

Extended patterns on the substrate or on the substrate table formedaccording to any of the described methods are in an embodiment of adetection method scanned along the first direction of the extendedpattern. Before scanning auxiliary steps for improving the scanning canbe performed and will be discussed now.

Exposure Modulation

In an embodiment the extended pattern is formed onto the substrategenerally extending in a first direction. The extended pattern may beformed having a modulation. The pattern extends generally in the firstdirection and a modulation is superimposed in the second direction.Applying a known modulation to the pattern can be used for noisereduction. Applying a known and predetermined signal to the substratetable also reduces noise in the measured signal. Since the modulation isknown it can be removed from the signal. In an embodiment a reciprocalmovement in the second direction is provided during the forming processof the extended pattern.

The extended pattern is formed on the substrate by moving the substratetable along a first direction, that could be generally parallel to adirection of movement of a long-stroke or short-stroke module orgenerally parallel to an axis of the global wafer stage coordinatessystem. In a further embodiment simultaneously a modulation issuperimposed onto the extended pattern by simultaneously moving thesubstrate table in the second direction perpendicular to the firstdirection. The moving in the second direction can be the result ofoperating a second set of long-stroke and short-stroke modules.

In an embodiment the modulation can be a regular pattern such as a sinuswavelike pattern. The modulation can have an amplitude of, preferably atleast 0.5 of the distance between the grid lines of the extendedpattern. In an embodiment the modulation has a larger amplitude. Themodulation can have a wavelength extending in the first direction, whichwavelength is preferably more than 10× the size of the grid linepattern.

In an embodiment the modulation in the second direction is provided byoperating the short-stroke module for moving the substrate table only.

Since a known modulation is superimposed onto the extended pattern,during subsequent measurements of the extended pattern, the modulationcan be accounted for in the measurement signal and can subsequently becorrected for, resulting in noise reduction.

Further reference is made to the above discussion of FIG. 9 d foranother example of exposure modulation.

Forming Auxiliary Elements

Further to forming the extended pattern on the substrate, alignmentmarks can be formed on the substrate by using any of the knowntechniques. In an embodiment alignment marks are provided on thesubstrate prior to forming the extended pattern.

Alignment marks, at least two, preferably at least ten, are formed onthe substrate and allow aligning the substrate in a certain positionwith respect to a zero position. Aligning the substrate is a knownmethod and uses the formed alignment marks on the substrate. From thealigned position, it is possible to irradiate and form the extendedpattern onto the substrate at a known location. In subsequent steps ofthe method the relative position of the extended mark with respect tothe alignment marks is known and can be used for locating the extendedpattern.

In an embodiment the extended pattern and alignment marks are formed ina single operation at the expose side of the lithographic apparatus. Inan embodiment the alignment marks and the extended pattern are formed onthe substrate in a single image exposure step. Both the extended patternand alignment marks are developed in a single step. Any positionalencoding errors in the alignment marks will be present in the alignmentmarks and similarly in the extended pattern.

In a further embodiment both the alignment marks and the extendedpattern are projected onto the substrate by moving the substrate tableto respective positions. The positioning of the extended pattern is onlya relative positioning with respect to the alignment marks. In fact theextended pattern is formed at an undefined position with respect to thealignment marks. This allows forming the extended pattern in a singlestep together with the alignment marks. Any correction for positionalerrors are detected and/or measured and/or corrected for in a subsequentdetection step and/or calibration step.

In an embodiment at least two or more marks are formed near a beginlocation and an end location of the extended pattern. These marks willbe referred to as extended pattern alignment marks. These marks can beused to align the extended pattern formed on the substrate, before anyof the properties of the extended pattern itself are measured. The marksare positioned parallel to the extended pattern. The skilled person willbe able to provide different techniques for aligning the lithographicapparatus with the extended pattern formed on the substrate held on thesubstrate stage.

In an embodiment the extended pattern alignment marks are positioned atone or on both sides along the extended pattern on the substrate. In anembodiment the extended pattern alignment marks are formed directly inline with the extended pattern. Such a position is shown in FIG. 6.

FIG. 6 shows an end section of an extended pattern 103, wherein marks104 are formed on the substrate as extended pattern alignment marks. Ina coarse substrate alignment step, an alignment device of thelithographic apparatus can measure the position of the marks 104 at bothends of the extended pattern 103 and align the substrate in order toscan the extended pattern along the first direction 102.

In an embodiment extended pattern alignment marks are positioned near anend section at a position near the extended centerline of the extendedpattern as shown in FIG. 7. Preferably a zero mark 111 is used asextended pattern alignment mark. Using an alignment measurement scanningboth extended pattern alignment marks 111 at both ends of the extendedpattern 110, two positions are obtained. A ‘straight’ line 112 betweenthe positions can indicate a centerline of the extended pattern 110.

In an embodiment multiple zero marks are formed on the wafer close tothe extended pattern. In an embodiment sets of two or more marks areformed to indicate positions or another property of the extendedpattern. In an embodiment an extended pattern alignment mark indicatesan off-center position of the extended pattern. In an embodiment theoff-center position corresponds with the position of one of the two nearpeak zero crossings for performing a flank scan according to anembodiment of the invention as will be explained hereunder in moredetail.

Pre-Measurement Steps (Alignment)

In an embodiment the method of detecting a property of the extendedpattern includes first aligning the substrate and the extended pattern.Aligning includes at least finding suitable relative positions of theextended pattern and an alignment sensor for performing the measurementalong the first direction. The substrate can be provided with auxiliaryelements, such as marks, for helping to determine the relative positionsof the extended pattern and/or the substrate table with respect to asensor in a first and/or second direction.

In an embodiment detecting/measuring a property of the extended patternformed on the substrate (the actual measurement scan) can be preceded bymoving the stage to a ‘zero’ position and subsequently performing astage align and/or a global substrate align. In an embodiment a coarsewafer align step is used to capture the substrate. After coarse waferalign, the substrate grid is known accurately enough to predict allmarks positions for fine wafer align. Such alignments are particularlybeneficial if the substrate is loaded from a loading station onto thesubstrate table with low accuracy. Thus all steps until loading can beperformed at relatively low accuracy (at high speed and/or at lowcosts). During the fine wafer alignment step, the marks are measured todetermine the direction/position of the extended pattern with highaccuracy. Determining the first direction is used to generate acoordinate system such that movement of the substrate table along one ofthe axis of the coordinate system corresponds with the first directionof the extended pattern.

Rotation of the substrate table WT and the substrate may be used to findthe first direction of the extended pattern.

In an embodiment the substrate is scanned for auxiliary marks such asthe extended pattern alignment marks. In an embodiment zero marks arepositioned at extended centerline positions on both ends of the extendedpattern, and positions thereof are collected during a quick scan of thewafer, in particular at the measure side of the lithographic apparatus.Positions of the zero marks can indicate/provide much information withregard to the position, the direction and the properties of the extendedpattern. The information is collected and processed in subsequent stepsin an embodiment of the method according to the invention.

Extended pattern alignment marks can provide a position of a centerlineof the extended pattern, or an off-center position. The marks canindicate properties of the modulation in the extended pattern, such asinformation with regard to the wavelength or amplitude of themodulation.

In an embodiment of the invention, a prescan or alignment scan of theextended pattern is performed in the second direction. This prescan isused to determine the position of the extended pattern in the seconddirection. A combination with a second prescan at a different positionin the first direction is used to determine the first direction withincreased accuracy.

The prescan relates to a physical parameter of the extended pattern inthe second direction. In an embodiment the parameter is detected bymoving in a direction deliberately including a component in both theexpected first and second direction. This is beneficial as scanning at arelatively large angle to the expected first direction will ensure thatthe position of the extended pattern is found in both the first andsecond direction with only one scan. With only one scan needed, this isa relatively time efficient method.

Both in this prescan as well as in the actual measurement scans (such asthe flank scans), the detected property (intensity) may be measuredbecause the extended pattern includes a set of gridlines protrudingtowards the alignment sensor. In an embodiment the alignment sensor isof the diffraction based type and the gridlines can be seen as agrating.

Flank Scan Positioning

A method according to an embodiment of the invention involves detectinga property of the extended pattern using an alignment sensor of thelithographic apparatus. In an embodiment a property of the extendedpattern, extending in the first direction, is measured along the firstdirection of the extended pattern. To measure along the first directionthe substrate table is moved in the first direction thereby changing therelative positions of the alignment sensor and the extended pattern.

In an embodiment, the measured property, such as intensity of diffractedradiation, is directly related to a physical property of the extendedpattern, and in particular to a physical property of the extendedpattern in the second direction. The method allows measuring a physicalproperty of the extended pattern linked primarily to a position alongthe extended pattern in the first direction.

The scanning of any embodiment of the extended pattern formed on thesubstrate includes detection of a property along a first direction ofthe extended pattern. The scanning is performed along a generallystraight line positioned at a reference position of the relativepositions in the second direction of the sensor and the extendedpattern. In FIG. 4 an example of such a line is illustrated and thereference position in the second direction is indicated with Y_(s). Thepositions may be referenced to a center point of a camera image formedin the alignment sensor.

As a further pre-measurement step the extended pattern is positionedsuch that a desired output of the alignment sensor is achieved whichcorresponds to the measurement beam of the alignment sensor reachingsubstantially a center of the parallel lines or the near peak zerocrossings ZC1 and ZC2, as outlined in more detail later in thisdocument.

In an embodiment, firstly, the substrate is positioned such that ameasurement beam of the alignment sensor interacts with the extendedpattern (parallel gridlines) formed on the substrate or substrate tableaccording to e.g. FIG. 3, that is: the diffractive properties of thepattern are used and preferably measured. This may be performed bymoving the substrate (stage) in the second direction, as schematicallyindicated in FIG. 4, preferably substantially perpendicular to the firstdirection. The second direction can be generally parallel to the secondlong-stroke and short-stroke module for moving the substrate table withrespect to the reticle and/or the mainframe of the lithographicapparatus.

The alignment scan is preferably performed by moving the substrate tablein the second direction, or at least a movement having a component inthe second direction. Simultaneously in an embodiment a position encoderor interferometer provides to link the obtained diffractive pattern to aposition on the substrate/of the substrate table.

In an embodiment the substrate includes multiple extended patternsextending in the first direction located at different positions in thesecond direction. In an embodiment these extended patterns are formed inparallel. In a single stroke in the second direction, diffractivepatterns for these multiple extended patterns can be obtained. In thismanner the alignment data scan in the second direction is performed morequickly for these multiple extended patterns.

A response curve of the alignment sensor output signal along the seconddirection, i.e. a direction perpendicular to the extended pattern (i.e.the sensor signal along direction y in FIG. 4) is depicted in FIG. 5 a.As can be seen in FIG. 5 a, a peak maximum output signal is obtained,which occurs when the alignment sensor is aligned with a centre of theparallel lines. Moving from this centre towards an outside edge of theparallel lines, a spatially periodic pattern is obtained alternatelyproviding peak maximum output signals and peak minimum output signalsdue to interference effects.

The illustrated example of FIG. 5 a shows a response for a grid patternof only a few grid lines. In an embodiment, an extended mark having morethan 10 grid lines is used. In this embodiment, the periodic structurewill show less damping and will have more stable peaks. This isbeneficial as finding the maximum peak is less relevant.

In an embodiment the detection method records a physical property alongthe first direction of the extended pattern that is the result of aphysical parameter along the second direction. In this example therecorded property along the first direction can be the intensityresulting from the diffractive property of the extended pattern alongthe second direction. The diffractive property is most sensitive on theflanks of the intensity profile over the second direction (maximumslope=maximum sensitivity) as the derivative of the intensity to the yposition (second direction) is highest at the flanks. Further on it willbe assumed that the measured intensities are pre-processed so that thepeak minimum intensities are registered as negative peaks and the peakmaximum intensities are registered as positive peaks so that the flanksof the intensity profiles include zero crossings (FIG. 5 a). Thediffractive property is particularly sensitive at the near peak zerocrossings ZC1 and ZC2 adjacent to the position of peak maximum output.This is because at the position of peak maximum output the largestnumber of parallel lines contributes to the intensity at the peak,giving the peak value, whereas the zero value at the crossing obviouslyremains the same. The distance between the peaks and the zero crossingsis constant.

According to an embodiment, the measurement is preceded by positioningthe substrate in the direction perpendicular to the lines as close aspossible to either of the near peak zero crossings (ZC1, ZC2) which thusserve as reference positions. Thereby, a maximum sensitivity in thedirection perpendicular to the lines may be obtained, as a slope of theresponse curve may be maximal at this point. Any errors in the formedextended pattern as a result of encoder errors, such as the deviation ofthe extended pattern in the second direction as shown in FIG. 2, may bemeasured at this position with largest accuracy. Hereinafter thescanning position in the second direction Y_(s) formed by the near peakresponse zero crossing positions will be referred to as ‘flank scan’positions.

In an embodiment of the extended pattern including more than sevengridlines, such as the example according to FIG. 6, a prescan resultsimilar to FIG. 5 b will be obtained. Here the damping of the peaks ofthe diffractive pattern is less visible. Here any of the shown zerocrossings ZC10, ZC11, ZC12 and ZC13 can be taken as a reference positionin the second direction for subsequently performing the measurementalong the extended pattern in the first direction. If a secondprescan/flank scan is performed, the second scan should be performedat/near a zero-crossing having an opposite slope. Examples of possiblecombinations are ZC10 and ZC11 and ZC10 and ZC13.

In a further embodiment the scan in the second direction provides datawith respect to Automatic Gain Control settings. These settings can besaved and used for signal control. In the embodiment, the extendedpattern is scanned in the second direction. During the scan thealignment sensor will output an electrical signal corresponding to themeasured intensity. This electrical signal is used to determine the gainof amplifiers in the alignment sensor during the actual measurementscans in the first direction which will be performed later. The gain isdetermined so that the signal does not clip at maximum intensities,giving maximal Signal to Noise Ratio when the intensity is at itsminimum (zero) and maximum sensitivity. In an alternative embodiment thegain is determined by scanning over a fiducial. The fiducial includes afiducial marker. The fiducial and fiducial marker are produced so thatthe maximum and minimum intensities are higher respectively smaller thanthe intensities expected during the actual measurement scan in the firstdirection which will be performed later. The gain is determined so thatthe signal does not clip at maximum intensities, giving maximal Signalto Noise Ratio and maximum sensitivity.

In order to construct an intensity versus position signal, intensitiesof the alignment beam measured by the alignment sensor and the positionof the substrate table are sampled at exactly the same time. Thesynchronization between position and intensity sampling is implementedby a trigger scenario. In an embodiment a metrology device of thelithographic exposure apparatus includes an alignment tool that receivesa synchronization signal and a scan state signal from a synchronizationdriver. During the scan intensity samples are measured and positionsamples are received from the positioning system. Intensity samples andthe positioning samples should be combined. To reduce the influence ofthe acceleration overshoot, a time delay is inserted before theposition/light-sampling starts. This delay is denoted as ‘Vc_settling’or constant velocity setting.

In an embodiment using an alignment sensor based on diffraction orders,the peak-peak signal is maximized for the highest order (i.e. 7th order)to further improve accuracy. In an embodiment the peak-peak signal ismaximized for each detected order. This makes the stage much moresensitive to stage positioning.

In an embodiment an automatic gain setting is performed before eachdetection of the extended pattern along the first direction. This allowscorrecting gain settings for each scan along the first direction.

In an embodiment the extended patterns contain an amount of patternssuch that the complete set of extended patterns will fit into thenumerical aperture of an alignment sensor, for example in a CCD sensor.The image of the pattern will then result in a periodic (sinusoidal)signal. Then it will be possible to perform a periodic (sine) fit whilescanning in the second direction.

In an embodiment one or multiple extended patterns are read out at thesame time. This enables calibration updates and maintenance features.These marks should fit within the numerical aperture of the alignmentsystem.

Measuring Along the Extended Pattern

In an embodiment, after a prescan such as a first alignment and/or analignment data scan, the extended pattern is scanned generally along thedirection of the lines of the extended pattern, that is generally alongthe first direction (x direction according to the embodiment explainedusing FIG. 4). In an embodiment the substrate table is moved in xdirection. Thereby, any deviations of the parallel lines, such asdepicted in the enlarged view of FIG. 3 as well as in FIG. 4, willresult in a change in the output signal of the alignment sensor (as thealignment beam position varies according to the arrows at the centerpeak in FIG. 5 a). The output signal of the alignment sensor nowprovides a continuous signal along the parallel lines providinginformation about any deviations in the parallel lines in a directionperpendicular to it. A cause of these deviations of the lines may befound in errors of the encoder grating (i.e. the encoder target).Calibration of the encoder stage position measurement system can beperformed using the alignment sensor output signal as will be explainedlater in this document.

Furthermore, by making use of a plurality of extended patterns (e.g. theraster depicted in FIG. 3), a plurality of measurements at relativelyshort mutual distances is obtained, which may reduce interpolationerrors that would be obtained when attempting to interpolate betweenmutually more distant calibration points according to the conventionalstitching approach. By performing this calibration technique for aplurality of extended patterns along the raster, the calibration canthus be performed for a plurality of positions of the substrate stage,and can be performed in both x and y direction by making use of bothdirections of the raster.

In an embodiment a scan of the extended pattern along the firstdirection includes moving the substrate table using one of thelong-stroke and short-stroke modules, and ‘locking’ the otherlong-stroke and short-stroke module in the second direction.

In an embodiment the substrate table is positioned at the scanningposition in the second direction y, and moved using the firstlong-stroke and short-stroke module to a position beyond the extendedpattern formed on the wafer.

For scanning the extended pattern along the first direction, thesubstrate table is accelerated from its starting position in the firstdirection and in an embodiment the substrate table is brought to astable scanning velocity in the first direction while maintaining thesecond coordinate at the locked position. The scanning speed in thefirst direction is preferably over about 100 mm/s, and preferably over200 mm/s. In an embodiment using a near maximum velocity of thelong-stroke module, speeds of over 250 mm/s and 290 mm/s can beobtained. This will allow scanning the extended pattern in the firstdirection, the extended pattern being formed over a larger part of thesubstrate, e.g. 300 mm, in about 1 second. In prior arrangements a lineof marks having a similar length, would consists of 300 marks with a 1mm pitch and would have taken at least 15 seconds for only the scanningpart of the movement. This is because each mark would be scannedseparately, each time requiring the velocity of the substrate table tostabilize before measurements start. In between scans the substratetable would be stepped to a starting position for a next measurementscan. Switching between stepping and scanning consumes valuable time. Atime saving of over 90% is obtained.

In an embodiment of a discontinuous extended pattern (i.e. an extendedpattern wherein the lines for instance are built up of several separatefeatures), it is possible to detect at non stable velocities. Further ifthe discontinuous extended pattern was formed using changing dynamicalproperties as indicated in embodiment discussed above, these differentdynamical properties are detectable when scanning the discontinuousextended pattern.

While moving the substrate table at a stable velocity in the firstdirection, in an embodiment data is collected using the alignment sensorresulting in a data scan of intensities along the first direction withrespect to a diffractive property of the extended pattern, preferablythe intensity of a diffraction order.

In an embodiment in one scan along the extended pattern, multiplediffraction orders are measured, preferably fifth and seventhdiffraction orders. Obtaining data with respect to multiple orders in asingle scan allows interpolation of measured results and in someembodiments a noise reduction can be obtained. Diffraction ordersgenerally behave the same with respect to substrate reflectivity (suchas wafer reflectivity). As the substrate reflectivity increases theintensities of the orders also increases.

After reaching an end section of the extended pattern in the firstdirection, the substrate table is decelerated. The obtained data issaved in a register of the lithographic exposure apparatus. In anembodiment it is pre-processed in order to prepare the data for furtherprocessing. Pre-processing may incorporate subtracting a constant valuefrom the intensities (so that peak minimum intensities are representedas negative intensities).

The alignment signal depends on the spatial position of the markunderneath the optical module of the alignment sensor. Scanning in thefirst direction of a perfectly straight extended pattern results in adc-signal.

If the extended mark were to be slightly rotated under scanning asinusoidal signal arises. It is intended that the first scan of theflank scan is performed at the position Y_(s,ZC1) in the seconddirection (corresponding to line 80 in FIG. 10). As this is at the flankof the intensity profile, this is also referred to as a flank scan. Theopposite scan should be performed at Y_(s,ZC2) (corresponding to line 81in FIG. 10) which obviously then also is referred to as a flank scan. Ifthe extended mark happens to be rotated as a result of misalignment inany of the pre-measurement steps, a sinusoidal signal arises as a resultof the diffractive properties in the second direction Y (correspondingto line 82).

Alignment is sensitive to position noise directly on the slope of thesignal. This is caused by the fact that the derivative with respect tothe position is at a maximum on the slope of the signal. Any smalldeviation in position results in a maximum deviation of the intensitysignal.

On the other hand at the peak of a signal alignment is insensitive toposition noise since the derivative with respect to position is zero.Any variation in signal strength caused by the laser now becomesdominant. In an embodiment the detection method includes detecting aproperty of the extended pattern along the first direction at therelative second position near the peak, indicated in FIG. 10 withY_(s,peak). In the obtained signal the laser noise is dominant and thesignal can be used for possible noise reduction in the signals at othersecond positions.

As explained, by measuring on the slope of the spatial intensity profileand moving along the grating of the at least 35 mm, at least 45 mm, atleast 90 mm, at least 190 mm, at least 290 mm or at least 440 mm longextended pattern, the intensity variations as function of the substratetable WT position can be measured at maximum sensitivity. Theintensities as measured during a flank scan, wherein the extendedpattern is scanned at relative position Y_(s,ZC1), include a noisecomponent. Embodiments of the invention include steps to reduce noise inthe scanning of the extended pattern along the first direction.

The measurement may be repeated starting from the other near peakresponse zero crossing: thereby, two measurements along the sameparallel lines are obtained, which allows to account any differencesobserved to variations in reflection of the surface of the substrate,thereby the two measurements allowing to take into account suchfluctuations in reflectivity of the surface of the substrate. Asindicated in FIG. 5 a the slope of the diffraction signal has adifferent sign. If the extended pattern is deformed as a result oferrors during forming the extended pattern on the substrate, such asschematically illustrated in FIG. 4, the grid errors near the Y_(s,ZC1)and Y_(s,ZC2) positions will result in signals with opposite changes. Onan absolute scale the changes are similar, however of a different sign(positive, negative).

In a further embodiment of flank scanning, two generally parallelextended patterns 148, 149 are used (FIG. 11). After a first prescan,position A is found as a position of a zero crossing of a first extendedpattern 148 of the two generally parallel extended patterns. Fromposition A (a coordinate in the y direction in the indicated x-ycoordinate system), a scan in the x direction, along the first directionof the first extended pattern 148 is performed. The lithographicapparatus is controlled such that from A the substrate table WT is movedwith respect to the alignment sensor in a direction parallel to theextended pattern. Although the detected property is first a signal closeto zero (as it is a zero crossing), due to deviations in the extendedpattern in the second direction, the signal will change when thesubstrate table and substrate are moved in the first direction.

By moving from A in a direction x, eventually the complete extendedpattern is scanned and a position B is reached. Position B (againcharacterized by its coordinate in the y-direction) does not need to bea zero crossing, since the extended pattern could have a deviation atthat very position. In an embodiment the measurement spot is moved inthe second direction by a distance equal to the grid size. Theembodiment according to FIG. 11 is different however.

From B the substrate table WT is moved such that it is possible to scana second extended pattern 149 in the second direction, performing aprescan, in order to find a zero crossing, indicated with C in FIG. 11.The alignment sensor is than set to scan the extended pattern 149 from Cin an x direction along the extended pattern 149 towards D.

From D the substrate table is again moved, and in an embodiment anotherprescan is performed in order to find a different zero crossing from A,here A*. Subsequently a scan is performed from A* to B*, in a directioncompletely equal to the direction of the first scan of extended pattern148. Then a second scan at a different zero crossing C* is performed onextended pattern 149 in a direction towards D*.

The method according to FIG. 11 will result in two flank scan data setsthat will allow to separate reflectivity and diffractive intensity.

Scanning a mark back and forth can reduce noise induced by the movementof the substrate table, laser noise, noise related to control andtemperature.

In an embodiment the detection method of detecting a property of theextended pattern includes detecting a diffractive property andpreferably multiple orders of the diffractive signal are measured. Themetrology device for detecting a property of the extended patternincludes a tool, such as an alignment sensor, that is arranged andconstructed to measure and separate multiple orders, such as the fifthand seventh order signal in a diffractive response signal. In a singlescan multiple signals resulting from the diffractive property of theextended pattern formed by grid lines, can be obtained.

In an embodiment a next scan of the extended pattern along the firstdirection includes repositioning from Y_(s,ZC1) to Y_(s,ZC2,) (e.g. 8 umin case of 8 um alignment structure) and doing the reverse movementwhile measuring the intensity profile yields two signals of the extendedpattern (being for instance 200 mm or longer). This repositioning leadsto a scan at a position at the other near peak zero crossing of thediffraction signal obtained during a scan in the second direction.

The back and forth scan of the extended pattern along a first directionyields two signals S₁ and S₂. The half of the sum of signals S₁ and S₂can be expressed as the substrate reflectivity. Subtracting thesubstrate reflectivity from the original signal S₁ and S₂ makes itpossible to correct for this effect. Alternatively, the difference ofsignal S₁ and S₂ can be expressed as the twice the original trend in thesignal and correcting for this trend yields a noise term.

In an embodiment to reduce noise even further sample points within onescan can be averaged to a pitch of 1 mm. A full scan can contain 16000sample points spanning 300 mm, i.e. 53 samples points per millimeter andin some application spanning 450 mm. This can be used to reduce thenoise with a factor 7.

Normalization is also a known technique for noise (laser noise)reduction. In an embodiment frequency transformation, Fouriertransformation, can be applied for normalization and noise reduction.

Measuring a Modulated Extended Pattern

In an embodiment the extended pattern was formed using a modulationtechnique or was formed using a patterning device arranged to be used inilluminating an extended pattern having a modulation in the seconddirection, e.g. as discussed in combination with FIG. 9 d. Applying aknown and predetermined signal to the substrate table position driverscan also reduce noise in the measured signal for scanning the extendedpattern along the first direction. Since the signal is known it can beremoved from the signal. A benefit of modulating the signal to bemeasured by the alignment sensor is that the Signal to Noise Ratioincreases as most of the time a non-zero value can be measured. In thealternative of measuring at the peak (Y_(s,peak) in FIG. 10) themeasurements are less sensitive.

In an embodiment the extended pattern, having a generally extended formin the first direction, is formed on the substrate having a modulationin the second direction. In an embodiment extended pattern alignmentmarks are formed on the substrate at positions that form an extendedcenterline of an equilibrium position, which serves as a referenceposition, of the modulated extended pattern. This allows reading theequilibrium position in a pre-alignment step. In another embodimentmultiple scans in the second direction are performed in order to obtaindata with respect to the equilibrium position (as a reference position).Multiple scans are used since it is not known beforehand which phase ofthe modulation corresponds to which position in the first direction.Therefore scanning in the second direction at different positions in thefirst direction may be used to determine and couple the phase of themodulation to the position in the first direction.

In an embodiment the extended pattern includes at least a section thatis without modulation, e.g. the first 10 mm close to the end section ofthe extended pattern in order to allow to obtain the equilibriumposition and to obtain flank scanning positions from the double zeronear peak positions that can be obtained from the diffractive data whenscanning the extended pattern in the second direction.

In an embodiment an extended pattern in the first direction includesmultiple sections having a pre-defined modulation amplitude. In anembodiment different kinds of modulations extend over different lengthsin the first direction. Having different kinds of modulations ordifferent modulation frequencies or amplitudes allows optimization fordifferent purposes.

Measuring Along the First Direction of the Extended Pattern UsingModulation

In an embodiment of the detection method and lithographic apparatus formeasuring a property of an extended pattern, modulation is used formeasuring the property. The extended pattern can be formed withoutmodulation.

Examples of using modulation in a detection method include a servocontrolled modulation in a y direction during detection of a propertyalong the extended pattern in the first direction or/and using thenatural frequency of the substrate table.

In an embodiment the substrate table is vibrating at its naturalfrequency. Several methods are available for generating the energy tobring the substrate table into a vibrating state. A substrate table WTand a substrate W vibrating at their natural frequency will have a knownfrequency and a relatively stable amplitude. In an embodiment thesubstrate table and the substrate have a vibration that includes atleast and preferably for the most part, a vibrating action in the seconddirection, perpendicular to the first direction of the extended pattern.During moving of the substrate table and detecting a property of theextended pattern, the substrate and the substrate table will move withthe natural frequency with respect to the alignment sensor and theposition sensor IF (FIG. 1). In a subsequent step this vibration can beseparated from the signal and will lead to a noise reduction. Themovement of the substrate table WT can be detected with the positionsensor (IF). The measured/determined position can be coupled to adetected property.

FIG. 8 (d) illustrates an extended pattern 50 including five grid lines.It was formed at an expose side and on an enlarged scale deviations inthe second direction (y) as a result of encoding errors in positioningare shown. At a measurement side, a metrology device such as analignment sensor is directed at the extended pattern 50, the substratetable WT is moved with respect to the metrology device and, if nopositional errors occur the substrate table and the substrate are movedwith respect to the tool according to line 51. If the substrate tableand the substrate vibrate at the natural frequency, a vibrating movement52 is superimposed on the line 51. The signal received will as a resultof the natural frequency having an amplitude 53 move back and forwardover the grid lines resulting in a detected signal that is similar(mutatis mutandis) to a signal moving over FIG. 5 a between the ends ofarrow 53. As a result of deviations in the extended pattern, this signalwill differ slightly and these errors can be corrected for in asubsequent calibration. The natural frequency can be separated from thedetected signal.

Using the method according to the invention an accuracy of 8 nm can beobtained. When corrected with the at least a combination of two or moreof the noise reduction methods, including a modulation technique, asub-nanometer accuracy is obtainable.

Stitched Mark Measurements

In an embodiment a first set of gridlines is produced in a first layerand a second set of gridlines is produced in a second layer. Both setsof gridlines are periodic with the same period in the second direction.The first set and the second set of gridlines are interlaced. Thecombination of this stitched extended pattern is also referred to as astitched mark. In case the stitching error is zero (or in case ofperfect overlay) the second set of gridlines is positioned between thefirst set of gridlines so that the stitched mark is periodic with halfthe period of the first and second sets. In this case the gridlines ofthe second set of gridlines have an equal distance to the neighbouringgridlines of the first set of gridlines that surround it. In case of astitching error (or an overlay error), for instance because ofdeviations during the production of the first set and second set ofgridlines, the second set of gridlines is displaced in the seconddirection. As a consequence the distance between the gridlines of thesecond set of gridlines and a first neighbouring gridline of the firstset of gridlines is smaller than the distance between the gridline ofthe second set of gridlines and a second neighbouring gridline of thefirst set of gridlines. The stitched mark is now periodic with theperiod of the first or second set of gridlines and not with half thatperiod.

In the embodiment an alignment sensor is used that is arranged toirradiate the stitched mark with a beam of alignment radiation and thatis capable of measuring intensities of diffraction orders of the beam ofalignment radiation diffracted by the stitched mark. In the case of thezero stitching error (perfect overlay), only integer diffraction ordersare created (i.e. first, second, third, fifth, seventh etc.) Asdiffraction orders are diffracted with different angles with respect tothe beam of alignment radiation, the orders can be identified by theirangle (or their distance to the beam of alignment radiation and thustheir position on a receiving part of the alignment sensor as will beclear to the skilled person). Because in case of a stitching error(overlay error) the distance between the gridlines of the second set ofgridlines and the two neighbouring gridlines of the first set ofgridlines differs, the diffracted radiation includes fractionaldiffraction orders i.e. {0.5, 1.5, 2.5, 3.5 . . . } next to integerdiffraction orders. They are fractional relative to the first integerdiffraction order. The higher the offset (stitching error or overlayerror) from having equal distances between the lines of the stitchedmark, the larger the intensity of the fractional diffraction ordersrelative to the intensity of the integer diffraction orders.

In case the first set of gridlines and the second set of gridlines arenot periodic in exactly the same direction, the intensity ratio betweenthe fractional and the integer diffraction orders change in the firstdirection.

By using an alignment sensor capable of measuring the intensitycorresponding to at least one fractional diffraction order and theintensity of at least one integer diffraction order, the spacing betweenthe lines of the stitched mark (i.e. the overlay between the first setof gridlines and the second set of gridlines) can be determined. This isdone by comparing the intensity of at least one fractional diffractionorder and the intensity of an integer diffraction order.

Depending on stitching error or overlay error, a scan of the extendedpattern as schematically illustrated in FIG. 12 (or a prescan of theextended pattern G22 according to FIG. 9 b), results in detectingdiffractive pattern including such fractional diffraction orders.

In an embodiment an alignment step is performed in that a furtherreference position is deducted with a coordinate in the second directionof the stitched extended pattern that is similar to the secondcoordinate for a flank scan of a normal (non-stitched) extended pattern.Again positioning in the second direction with respect to the stitchedextended pattern in chosen such that the sensitivity of the actualmeasurements of the intensity of the diffractive pattern is maximal whenscanning in the first direction. As explained the sensitivity can bemaximized close to a zero-crossing, for instance on a flank of aprotruding gridline.

A benefit of this embodiment is that metrology becomes more accuratesince two extended patterns are measured in one scan (detection step) bymoving in the first direction. The stitched extended patterns allow forexample performing a substrate alignment step for both layers while atthe same time measuring their relative behavior.

Measuring two layers at the same time increases the communality inreadouts of the two layers. In a single readout temperature andvibrations are equal. In a repeated scan, temperature changes andvibrations will lead to different noise contributions during bothreadouts. In a single scan, the noise contribution is shared.

An extended pattern having a 5^(th) order layer (a x/5 wide grid line)and a 7^(th) order layer (x/7 wide grid line), then during a waferalignment method two global wafer coordinate systems can be calculatedfor both layers. However the relative difference between the two layerscan be measured by the fractional orders, since information in thefractional orders is a measure for the relative behavior of both layerswith respect to each other.

Since the two extended patterns are on the same global wafer coordinatesthey share the same grid features or mirror features. Simultaneous readout, leads to a sharing the same grid or mirror location preventing anadditional error.

In order to perform a measurement scan on the two layers at the sametime a ‘flank’ can to be chosen for the 7^(th) and 5^(th) order. Thesetwo layers have to share the same global wafer coordinate system. Duringan initial calibration scan in the second direction such a position canbe determined as indicated above.

Controlling Moving the Substrate Table

In an embodiment a servo control for controlling movement of thesubstrate table, and in particular in the measurement stage of thelithographic apparatus, has at least two modes for scanning the extendedpattern in the first direction. In an embodiment one of the modes isused for scanning the extended pattern in the first direction. In anembodiment a combination of modes is used. The modes for operating themovement of the substrate table are known from calibration techniquesused extensively in lithography.

In an embodiment the movement of the substrate table is controlled whilecontrolling the position of the substrate table with respect to areference such as a grid plate. In this manner the substrate table willfollow the errors in the reference. This mode is known as high bandwidthcontrol. FIG. 8 b shows schematically an alignment scan when thesubstrate table (WT FIG. 1) is under high bandwidth control. If theextended pattern is scanned under high bandwidth control, the signal tobe measured is the variation in light intensity. During high bandwidthcontrol a signal representing the light intensity is obtained independence on the measure grid and expose grid. As a result of, not yetknown, errors in positioning of the substrate table, the substrate tableWT and the substrate W having the extended mark can move with respect tothe metrology device such as the alignment tool deviating from astraight line in the first (x) direction.

In an embodiment a servo control for controlling movement of thesubstrate table is independent from its measured location. Such controlsettings can be referred to as under low bandwidth control. Servocontrol is performed without feedback of the measured position. Underlow bandwidth control a light intensity signal is obtained by scanningthe extended pattern in the first direction which signal is dependent onthe expose grid only. FIG. 4 shows schematically an alignment scan whenthe substrate table is under low bandwidth control. If the extendedpattern is scanned under low bandwidth control, the signal to bemeasured is the variation in light intensity. Since the position of thesubstrate table and therefore the substrate and the extended pattern isnot controlled with a positioning system, the movement of thesubstrate/extended pattern is controlled using the stroke modules only.During low bandwidth control a signal representing the light intensityis obtained in dependence on the expose grid.

In an embodiment the servo control for the substrate table is arrangedto follow the slope of the signal detected along the extended pattern,in particular if the extended pattern is formed having a modulation. Inan embodiment the servo control for moving the substrate table iscontrolled using a feedback signal from the alignment sensor. Whilescanning the signal measured with the alignment sensor is held constant.In an embodiment a derivative of the signal received in the alignmentsensor that represent light intensity sensed in the sensor, iscalculated. As change in the derivative signal is immediately resolvede.g. by a correctional movement of the substrate table, preferably usingthe servo control in the second direction.

In this embodiment both the expose and measure grid are used fordetermining a calibration measurement using the extended pattern. Anexample of ‘following the flank’ is shown in FIG. 8 c, wherein, althoughthe extended pattern is formed having deviations in the seconddirection, the relative position on top of the grid is maintained orcentered close to the second and third grid line. By maintaining arelative position with respect to the property to be measured of aphysical property in the second direction, following the flank becomespossible. From the data measured, and in particular from the positionaldata that was detected, errors in the extended pattern that were theresult of errors at the expose stage, are directly obtainable.

If the servo control for the substrate table is arranged to follow theextended pattern, the position of the substrate table using the measuregrid can be followed and can be compared with the position of theextended pattern formed on the substrate. If the extended pattern isformed having a modulation, this modulation will be present in both datasets and can therefore be cancelled out. Comparing the two data setswill result in a deviation of the encoder position and the extendedpattern formed on the wafer.

In a further embodiment property sampling of the extended pattern ispossible with an image sensor similar to any of the above mentionedmethod steps. An image is sampled on top of extended pattern and severalimages can be sampled along the first direction. Any deviation for theimage is corrected in 6 DOF and added to an IFM/encoder system, such theimage remains with the view of the camera. This method allows correctinge.g. the IFM/encoder system with respect to an alignment system.

The moving of the substrate when projecting the pattern onto it may forexample be performed at half a scanning maximum speed of thelithographic apparatus, and with a high servo control bandwidth, so asto allow the stage to follow the measured encoder grid errors asmeasured by the encoder system with a high accuracy.

Calibration

In an embodiment creating the extended pattern on the substrate will beperformed at the expose side of a dual stage lithographic apparatus,while the measuring will be performed at the measurement side. In anembodiment the lithographic apparatus according to FIG. 1 includes ameasure grid and an expose grid. A position of the substrate table WT atthe measurement side is measured using the measure grid. In thisembodiment the second positioning device PW includes the measure grid.

Therefore, encoder grid errors at the measurement side may alsotranslate into observed deviations when performing the measurement alongthe line. In order to enable to distinguish between these sources oferror (encoder grid at the expose side and at the measurement side), thesubstrate may further be rotated by substantially 90 degrees in theplane of drawing of FIGS. 3 and 4, and the measurement being repeatedalong the extended lines in the other direction. Thereby, errors in theextended lines on the substrate may be discriminated from errors of theencoder position sensor at the measure side, thus enabling to take eachinto account appropriately. In order to further discriminate betweenthese sources of error, the substrate may further be translated, and themeasurement repeated.

The translating may in a practical embodiment be achieved by projectinga second pattern onto the substrate which pattern is translated relativeto the other pattern, and using the translated pattern for the lattermeasurement, thereby obviating the need to displace the substrate on itsstage (thus obviating an additional source of errors).

In an embodiment two patterns are exposed on top of each other with aslight translation such that during both patterns can be readout in asingle scan without translating the stage. The detected properties canbe used to construct a calibration map for overlay. In an embodiment thesecond exposed extended pattern is positioned next to a referenceextended pattern formed on a substrate placed in the lithographicapparatus as a part of a maintenance procedure.

As a continuous or semi continuous measurement along the extendedpattern (in this example the parallel lines) is performed, data in awide spatial frequency range may be obtained, which may obviate the needto make use of a plurality of different calibration techniques, therebypossibly achieving a fast calibration and possibly obviating the need tostitch the different calibration results of the different calibrationstogether, thereby possibly saving processing time and avoidingambiguities between the calibration results of the differentcalibrations. It is remarked that a discontinuous measurement is alsopossible in an embodiment of the invention.

Height Measurements and Z-Grid Calibration

Height measurements (Z-coordinate) of a substrate or substrate tablewith respect to the lithographic apparatus and more specifically a twodimensional z-grid calibration are desired for a lithographic apparatus,and specifically, but not limited to, for a lithographic apparatusincluding a positioning system having an encoder system including gridplates. Z-grid calibration can include error corrections for z (height),Rx and Ry of the substrate table WT with respect to the grid plates orof the substrate table WT including the grid plates with respect to theencoder system. A high resolution for calibration is desirable. Acombination of techniques can be used to perform the calibration, suchas a level sensor and a single shot focal method. However thecombination of techniques is time consuming and can take up to 5-6 hoursfor full calibration.

One of the problems of current calibration techniques and in particularZ-grid calibration, is that the exposure time and total read-out timefor performing all calibration measurements and calculations aregenerally proportional to the desired resolution. With increasingresolution demands, calibration time will increase further.

A method is provided for performing z-grid calibration more quickly thanprior art solutions. The method includes forming a focus sensitiveextended pattern on a substrate supported by a substrate table by movingthe substrate table with respect to a patterning device during exposure,resulting in a focus sensitive extended pattern. A pattern is exposed onthe substrate while moving the substrate table in a first direction,thereby forming the extended pattern as described before. The methodincludes the step of forming the extended pattern using a knowntechnique for forming a focus sensitive mark. Examples of focussensitive marks are marks including a wide line in combination with finelines and/or marks formed according to the single shot focal method,FOCAL marks (partially chopped lines) and/or PreFoc/LVT marks. The focussensitivity of Prefoc/LVT marks is created by usingnon-telecentric/tilted illumination. This is shown schematically inFIGS. 16 a and 16 b. Beams of radiation B from a radiation source areguided through a schematically illustrated wedge WDG, resulting in ashift of the resultant position of the formed mark. Using a patterningdevice of suitable points PMA, the extended pattern is formed by movingthe substrate in the direction of the formed lines of the marks. Theleft hand side shows a single Prefoc/LVT mark, the right hand side adouble Prefoc/LVT mark.

In an embodiment the method includes forming a focus sensitive extendedpattern extending in a first direction. The focus sensitive extendedpattern is formed in dependency of the local height of the substrateand/or substrate table with respect to the lithographic apparatus andtherefore height errors can be part of the formed extended pattern. Afocus sensitive extended pattern allows measurement of the heighterrors. Examples of height errors are:

encoder/grid errors

errors in substrate height measurement

stage positioning errors

deformation of WT/chuck due to thermal and/or mechanical forces

image height errors

residual mask errors

In an embodiment height errors result in shifting (positionaldisplacement) of the extended pattern in the second direction duringformation of the extended pattern. Examples of such a focus sensitiveextended pattern are shown in FIGS. 14 a and 14 b which have beendescribed above. The focus sensitive parameter can be measured bymeasuring a property of the extended pattern in the second direction,along the pattern in the first direction. The focus sensitive parametercan also measured using a focus sensitive structure such as the exampleof FIG. 13 a.

In FIGS. 14 a and 14 b each line represents an extended pattern formedfrom a focal mark unit, wherein each focal mark unit includes a widemain line and one or more adjacent fine lines as illustrated in FIG. 13a.

Measuring a parameter related to height or Z-coordinates, is possibleaccording to different methods. A possible method includes directmeasurement of the positional shift using a direct measuring tool suchas a direct scanning technique for measuring a second-directionparameter of the formed extended pattern. The direct measurement toolcan include a scanning electron microscope or a scatterometer.

In a direct measurement tool a formed part of a line of an extendedpattern and especially of a special purpose extended pattern such as thefocus sensitive extended pattern can be analyzed. With a directmeasurement tool the formed width and or steepness of the formed linecan be measured/analyzed and can be used to calculate a property such asheight and can be used to perform a z-grid calibration.

In the example of FIG. 13 a, the fine lines 121, especially fine linesincluding a set of adjacent lines having a consecutively reducing linewidth in the y110 or second direction, will directly show focussensitivity. A lack of focus will result in the most finest lines(smallest line width) not being formed, while wider lines are formed.The line width of formed fine lines extending in the first direction isan example of a parameter extending in the second direction that can bemeasured in a subsequent method step.

In an embodiment the second-direction parameter is measured by scanningalong the extended pattern in the first direction. This allows obtaininga value for the second-direction parameter, here representing a focussensitive parameter, over at least a part of the length of the extendedpattern, in an embodiment over a distance in the first direction that isat least 40×, in a further embodiment at least 80× the width of the markin the second direction. Scanning allows obtaining values representingthe desired parameter over a large distance in a relatively small amountof time, allowing more quick measurements and eventually quickercalibration.

In an embodiment a position in the second direction is found and usedsimilar to the embodiments according to FIG. 3 and FIG. 4, so calledflank-scan.

In an embodiment scanning along the first direction is performed usinghigh or low bandwidth mode according to FIGS. 8 a and 8 b. In anembodiment scanning the extended pattern includes following a line ofthe formed extended pattern, that is measuring e.g. the displacement inthe second direction, such as the line width of a line. In anotherembodiment scanning includes only a movement in the first direction andmeasuring a parameter of the extended pattern at a certain coordinate inthe second direction.

In an embodiment scanning along the first direction includes performinga modulated scan according to FIG. 8 c or 8 d. In an embodiment thefocus sensitive extended pattern is formed using modulation according toany of the described embodiments.

In an embodiment first a height calibration according to any of themethods described herein is performed using an extended pattern. Onlyafter a height calibration a further calibration such as XY calibrationis performed by forming an extended pattern for that purpose andmeasuring a desired parameter. The design of the focus sensitivepatterns (i.e. combination of regular pattern in combination with afocus sensitive pattern or the use of two focus sensitive patterns withopposite sensitivity) make the focus measurement (more or less)independent of XY errors. This will allow isolating height errors moreeasily from other positional errors. Alternatively one would measure aproperty that is only focus sensitive (e.g. side wall angle) using ascatterometry system.

In another embodiment the method includes measuring a second-directionparameter resulting from diffractive properties of the special purposeextended pattern. The special purpose extended pattern according to FIG.13 a has diffractive properties in the second direction similar to a‘normal’ extended pattern as illustrated in FIG. 3 and FIG. 4. Similarmeasuring methods are possible

The formed extend pattern including main line 120 and fine lines 121will have diffractive properties in the second direction that can bescanned using a method according to an embodiment of the invention byscanning along a first direction. If due to severe non-focus all finelines 121 are out of focus and as a result thereof are not formed, or atleast not completely, than the diffractive property of the main lines120 extending in the first direction is very similar to the diffractiveproperty of the normal extended pattern. In FIG. 13 b a result ofmeasurement of the diffractive property of the formed extended patternis measured in the second direction y110 is shown. Peaks (maximumintensities) 127 of the resulting spectrum as shown in FIG. 13 b lie atthe center line 128, shown as a dotted line, of each of the main lines120.

If however some of the fine lines 121, and especially some of the widerlines of the set of fine lines 121 are formed as a result of some focus,the resulting peaks in the diffractive spectrum will shift as isindicated in FIG. 13 c toward a position indicated with dotted lines129. The shift from centre line 128 to the measured position 129 isdirectly dependent on local focus.

LVT/Prefoc marks lead directly to shifted patterns. By comparing theshift of a regular pattern with the shift of a LVT/Prefoc pattern or bycomparing LVT marks with different wedges, the focus (Z) contributioncan be separated from the XY contribution.

Scanning along the special purpose extended pattern in any of the modesaccording to FIG. 8, will allow to detect the shift of the peak 127 as aresult of local focus errors.

In an embodiment the special purpose extended pattern 119 is formedextending in the first direction, wherein in that first direction one ormore parts of the pattern are formed with—and one or more parts arewithout the fine lines 121. In the first direction the pattern 119 willhave a part showing focus sensitivity and a part showing no focussensitivity. This will allow to determine the centre position 128 of themain lines 120 during the scan in the first direction as a first stepand measuring focus as a result of the partially formed fine lines 121for the remainder of the extended pattern.

Within the invention other embodiments for measuring the special purposeextended patterns are possible.

Lithographic Apparatus Calibration Process

In a lithographic apparatus, an alignment of the patterning device(mask) with respect to the substrate (wafer) may be required, e.g. inorder to ensure that a following irradiation of the wafer with apatterned radiation beam matches a pattern already established on thewafer.

Thereto, in an embodiment, use is made of a sequence of calibrations toachieve a desired positioning accuracy. A description of such a sequenceis provided below.

A patterning device (such as a mask) is loaded onto a support (such as amask table), a wafer (or other type of substrate) is loaded onto a waferstage (or other type of substrate stage). Measurement of a position ofthe mask, a position of the wafer and possibly a flatness of the waferare performed, after which the wafer is exposed.

The loading of the mask onto the mask table provides a positioning ofthe mask with respect to the mask table on a micrometer level. Then, bya suitable measurement system of the lithographic apparatus, a positionof the mask with respect to the mask table is measured on micrometerlevel. Also, a position of the mask table with respect to the projectionsystem is measured by a suitable position measurement system of thelithographic apparatus. Hence, the position of the mask is known withrespect to the projection system on a micrometer level.

The loading of the wafer on the wafer stage, also referred to as waferstage, also provides for a positioning of the wafer on the micrometerlevel. The position of the wafer stage is measured with respect to themetrology frame by an interferometer and/or encoder measurement system.

A more accurate position measurement on nanometer level or sub-nanometerlevel is performed as a next step. A position of a reference of thewafer stage is measured in the dimensions x, y and Rz with the encoderor interferometer in combination with an alignment sensor in cooperationwith a reference of the wafer stage. Using the same measurement systemin combination with a calibrated grid on the wafer, x, y and Rzpositions of the wafer are determined. Thereby, the position in thehorizontal plane and a rotation with respect to the vertical axis hasbeen measured for the wafer and the wafer stage. Then, making use of theflatness measurement system and the reference of the wafer stage, thepositions z, Rx and Ry of the wafer stage are determined therebyproviding wafer stage height and tilt. The same measurement system,applied onto the grid on the wafer, provides wafer height and tilt z,Rx, Ry. In a dual stage system having a measurement side and an exposeside, the above measurements are performed at the measure side. As theposition of the wafer as well as the position of the wafer stagereferences are known, the position of the wafer can now be determinedwith respect to the references of the wafer stage. The wafer stageincluding the wafer is now moved to the expose side. At the expose side,the position of the wafer may now accurately be determined by measuringthe position of the references of the wafer stage. Thereto, ameasurement is performed in which mask references of the mask areprojected via the projection system onto a respective reference of waferstage. Hence, the position of the mask is now accurately determined withrespect to the position of the references of the wafer stage. Byperforming this measurement on multiple references of the wafer stage(e.g. located a respective edges thereof), the position of the masktable is determined in 6 degrees of freedom, allowing to calculate theposition of the wafer there from, as the position relation between thewafer and the references of the wafer stage has been determined at themeasure side. Thus, the position of the wafer in 6 degrees of freedom iscalculated from the position of the mask image in 6 degrees of freedom,on the basis of a delta between the position of the wafer and thereference position of the wafer stage at the measure side. Exposure ofthe wafer may now take place.

The above process may be repeated for a following process layer on thewafer on the same lithographic apparatus and the same wafer stage, thesame lithographic apparatus and another wafer stage or on anotherlithographic apparatus.

Accuracy Considerations in the Lithographic Apparatus Stage PositionMeasurement

Positions on the wafer are determined during the measure and exposecycle making use of a stage position measurement system, such as anencoder, interferometer or an interferometer/encoder combination. Ingeneral, a measurement system incorporates its own length standard ofwhich a stability is guaranteed over a time period. Such a standard maybe based on a physical entity such as a scale in one or two dimensionsor a physical property, such as a wavelength of a stabilized opticalbeam, or others. As a target measurement area of the wafer is twodimensional, a two dimensional scale may be desirable. In case use ismade of an interferometer wherein a wavelength provides a standard forthe measurements, a single dimensional interferometer may be expanded totwo dimensions by a one dimensional reflector or mirror. In currentlithographic apparatuses, a required position accuracy for the exposureof the wafer is in the order of magnitude of 0.1 nanometer, while anaccuracy of a standard such as a scale or grid of an encoder or a mirrorflatness of an interferometer mirror may be orders of magnitude larger,e.g. in an order of magnitude of 100 nm or larger. These scale errors ormirror maps in case f interferometers may be calibrated using thecalibration methods outlined in this document. As a deviation of astandard may translate into a deviation of the position measurement,(re)calibrations, tracking, etc. may be required to increase long termstability. For such tracking and recalibration, the calibration methodsoutlined in this document may be used, either in full or as a fasterupdate e.g. using a limited amount of tracks, i.e. extended patterns.

Exposure positions and alignment marks may be at any position of thewafer surface area. Hence, accurate positioning over this area may berequired. At the expose position, the horizontal X, Y, Rz as a functionof X and Y, as well as the vertical grid Z may be calibrated using thecalibration methods described in this document.

Furthermore, sensitivity to rotations such as tilting of the wafer stagemay be found: Tilting of the wafer stage may be performed in order tocompensate for an unflatness of the surface of the wafer. Such a tiltingresults in a change in an output signal of position sensors of the stageposition measurement. A metrology model and a calibration map may beapplied in order to compensate for such changes in sensor output.Thereby, using a metrology model in a form of a matrix, wafer stageposition signals of the position sensors in a tilted position of thewafer stage may be calculated into position signals in an un-tiltedposition, which may then be calibrated, i.e. corrected for errors suchas grid errors, by a two dimensional calibration map. This calibrationmap for Z, Rx, Ry and Rz, e.g. as a function of X and Y at the measureas well as the expose side may be calibrated using the calibrationtechniques described in this document.

In an embodiment, a matrix is provided of position correction terms at aplurality of fixed locations (e.g. fixed grid positions), which positioncorrection terms may be added to the measured position in order toobtain the calibrated position. Interpolation of terms in the positioncorrection matrix may be applied in order to provide for calibrations inbetween the fixed positions. In addition to the correction terms forcorrection of the position in x and y direction, each term in thecalibration matrix may include one or more subterms in order to expresscorrections in multiple degrees of freedom. Thereby, a calibrationcorrection in 6 degrees of freedom may be obtained. Also, use may bemade of multiple correction maps, for example containing calibrationresults from different calibration methods for different spatialwavelength ranges. Furthermore, effects of switching between differentposition sensors or different reference grids may be taken into accountin the calibration matrix.

Error Sources in Lithographic Apparatus Stage Position MeasurementProcesses

In the below, a plurality of error sources will be described fordifferent configurations of lithographic apparatuses.

Single Stage Interferometer Position Measurement

A first configuration is provided by a lithographic apparatus having asingle wafer stage and an interferometer based measurement system tomeasure a position of the wafer stage.

In this configuration, interferometer beams are reflected onto a mirrorblock of the stage. A translation of the stage in X or Y directionresults in a relative displacement of the interferometer beam withrespect to the mirror block. Unflatness of reflecting surfaces of themirror block may result in stage position dependent inaccuracies.

The same holds for measurements of the stage position in verticaldirection, performed making use of e.g. a tilted mirror of the mirrorblock. Vertical interferometer deviations at measure and at expose aswell as measure to expose corrections may result from inaccuracies inthe measurement in Z direction caused by unflatness of the mirror(s)used in the Z measurements.

Rotational deviations are calculated from the different interferometermeasurements, e.g. performed by spatially apart interferometer beams.Inaccuracies in these interferometric measurements therefore translateinto inaccuracies in the calculated rotations. The calibrationtechniques described in this document may be used for calibrations in 6degrees of freedom.

A further source of error may be provided by grid deformations whichtake place during exposure due to immersion effects. For calibration ofimmersion specific effects resulting in position deviations thecalibration methods described in this document may be used to determinea correction on the grid.

A still further source of error may be provided by wafer deformation dueto wafer support, clamping induced forces on the wafer, grid distortionsdue to pollution and/or damage, etc. These deviations may be calibratedusing the calibration method described in this document.

Dual Stage Interferometer Position Measurement

In a dual stage lithographic apparatus, having interferometric stageposition measurement systems, essentially the same categories of errorsmay be found. As a result of mirror unflatness, errors may result in X,and or Y position measurements, Z position measurements, rotationalpositions as calculated from the measurements from spaced apartinterferometer beams. Furthermore, errors may result from wafer stagedeformations by forces exerted onto the wafer by wafer stage actuators,and forces exerted onto the wafer by a wafer clamping mechanism. Stageto stage differences in 6 degrees of freedom may be detected andcorrected using the calibration method as described in this document.

A further example of position measurement errors caused by stageinterferometer is described with reference to FIG. 17. A stageinterferometer system includes a first interferometer emitting beam B4and a second interferometer involving beams B1, B2 and B3. Due tooblique surfaces 43 b, 43 c of mirror 43, beams under an angle areprovided and incident on 47A, 47B. A vertical displacement of the stage,and hence vertical displacement of the mirror 43, will result in achange in the proportional lengths of B1 and B2 in respect of eachother. Deviations in the Z grid as a result if mirror deviations and/orprism deviations may be corrected with the calibration method describedin this document.

Further error sources in interferometer based systems may be provided ina configuration with two or more wafer stages within a singlelithographic apparatus. In such configuration, errors may occur due togrid deviations between the grids associated with each of the stages,and grid deviations due to immersion effects. These sources of error maybe corrected with the calibration method as disclosed in this document.

Still further error sources in interferometer based systems may occurfrom matching between different lithographic apparatuses, as a result ofgrid deviations between the grids of the different lithographicapparatuses. These sources of error may be corrected with thecalibration method as disclosed in this document.

Encoder Based Stage Position Measurement

In encoder based stage position measurement, basically twoconfigurations are applied at present. In a first configuration, a gridis connected to a stationary reference such as the metrology frame,while sensors are connected to the movable stage. A z measurement may beperformed based on a reflection on the reflective encoder grid.

A second configuration (hereinafter referred to as “movable grid encoderconfiguration”) wherein multiple sensors are connected to the stationaryreference such as the metrology frame, while a grid being connected orforming part of the stage. A z measurement may be performed based on areflection on the reflective encoder grid. In this movable grid encoderconfiguration, use may be made of a smaller grid, even at large rangesof movement of the stage.

A variety of possible sources of error will now be discussed for boththese configurations.

Stationary Grid Encoder Configuration

In this configuration, within a single stage a variety of sources oferror may be found including but not limited to:

local grid deformation, global grid deformation due to productionprocess tolerances, grid carrier tolerances, mounting and tolerances ofindividual grid plates, sensor inaccuracies, etc. These errors may haveeffect on stage positions as measured in x, y, z direction as well asrotations Rx, Ry, Rz.

Furthermore, different errors may occur at measure and at expose. Also,measure to expose errors may occur. Due to immersion effects, griddeviations may occur, which translate into measurement errors. Stillfurther, stage to stage deviations and machine to machine deviations mayresult.

A still further source of error may be found in a configuration whereinthe wafer stage is provided with 4 sensors at respective edges thereof,two of these sensors being arranged to measure in X and Z, while theother two are arranged for measuring in Y and Z. The stationary gridincludes a grid assembly including 4 grid plates which together form agrid plate assembly having a central opening for the projection lensassembly as well as for exposure. Due to this opening, in many positionsof the wafer stage, it will be observed that 3 of the 4 sensors are in aposition so as to cooperate with the grid plate assembly. The in total 6position measurements obtained from the 3 sensors enable to determinethe position of the stage is 6 degrees of freedom. Given the opening inthe grid plate assembly, a fourth one of the sensors will be out ofreach of the grid plate assembly. While moving the stage, depending onthe position of the stage, a different one of the 4 sensors may be outof reach, which will invoke takeover errors. Such a takeover may resultin deviations which may be calibrated using the calibration method asdescribed in this document. Also, all other deviations may be correctedusing the calibration technique described in this document.

Movable Grid Encoder Configuration

Also in this configuration, within a single stage a variety of sourcesof error may be found including but not limited to:

local grid deformation, global grid deformation due to productionprocess tolerances, grid carrier tolerances, mounting and tolerances ofindividual grid plates, sensor inaccuracies, etc. These errors may haveeffect on stage positions as measured in x, y, z direction as well asrotations Rx, Ry, Rz. Unflatness of the grid may furthermore translateinto measurement errors in z, Rx and/or Ry.

Due to a relatively large range of movement as compared to the size ofthe grid, a plurality of sensors may provided, so as to have sufficientnumbers of sensors available for cooperation with the grid in eachposition of the grid. Movement of the stage, thus of the grid, willthereby result in sensor switching, which may have effects on themeasurement accuracy at measure and/or at expose. Also, measure toexpose errors may occur due to e.g. grid deviation on the wafer. Due toimmersion effects, grid deviations may occur, which translate intomeasurement errors. Still further, stage to stage deviations and machineto machine deviations may result.

An example of a moving grid encoder stage position measurement system isdepicted in FIG. 18. This configuration is further described in US2008-0043212 (a1) which is incorporated herein in its entirety byreference. FIG. 18 depicts a top view of a wafer stage WST, encoderheads (sensors) such as referred to by 64, 66, etc. being provided on across shaped structure, Depending on a position of the stage withrespect to the cross shaped structure, some of the sensors will be ableto cooperate with grid structures arranged on the wafer stage WST. Inthis configuration, an interferometer is provided to measure a positionof the stage, the interferometer position measurement may be applied tocalibrate the encoder position measurements. This calibration techniquehowever is prone to similar inaccuracies as described above withreference to the interferometer position measurement. In other words,mirror unflatness of the interferometer mirror may affect an accuracy ofthe interferometeric calibration measurements. In addition to thepossible encoder and interferometer error sources mentioned above, theconfiguration described here may also be prone to take over errorsbetween the encoders on either side of a center of the cross shapedreference structure. A 6 degrees of freedom calibration of the movablegrid encoder configuration may be performed with the calibration methodas disclosed in this document. This may also be the case inconfigurations wherein an alignment sensor is applied which ismicroscope CCD camera based.

Extended Stitching Marks

A further calibration method is described with reference to FIG. 19B.Before describing this calibration method in more detail, reference ismade to U.S. Pat. No. 7,102,736 which is enclosed herein in its entiretyby reference. This prior art document discloses a calibration methodapplied with lithographic apparatuses having interferometer based stageposition measurement, the method wherein a plurality of spaced apartmarks (each e.g. including a plurality of points) are provided on amask, the marks being arranged diagonally on the mask in respect of bothaxis of measurement of the stage position in the plane of movement ofthe stage. An example of such mask is depicted in FIG. 19A. As depictedin FIG. 19A, the diagonal arrangement of marks will result in exposureof a diagonal pattern on the substrate. This exposure is repeated, thewafer stage being displaced with respect to the mask between successiveexposures, thereby resulting in a succession of mutually displaceddiagonal patterns. The exposure may be performed at the expose side of alithographic apparatus. Read out, which may take place at the measureside of a lithographic apparatus, takes place along the line A-A in FIG.19A. Thereby, positioning errors at the measure side and at the exposeside may be separated from each other, as the points along thehorizontal line A-A are read out at the measure side at a same position(along the first direction) while they have been exposed at the exposeside at different positions along the first direction. Interpolation maybe used for calibration in between the positions at which thecalibrations have taken place. The calibration method as will bedescribed with reference to FIG. 19B now applies this concept to thecalibration principle making use of the extended line measurements asdisclosed in this document.

FIG. 19B schematically depicts a mask structure having a plurality ofmarks, which may each include a plurality of points. The marks arealigned diagonally in respect of the directions X and Y. When thesemarks would be projected onto the substrate, an exposure pattern wouldbe provided onto the substrate, including a plurality of marks in asame, diagonal arrangement. According to this calibration method, duringthe exposure, the substrate is moved in respect of the mask in a firstdirection, in this example the X direction as indicated by arrow ARW.Thereby, the patterns of marks provides a plurality of extended patternson the substrate, as depicted in FIG. 19B, the extended patternsextending in the first direction, i.e. in this example in the Xdirection. The diagonal arrangement of the marks, in which the marks arespaced apart in the first direction as well as in the second direction(in this example the Y direction), thereby results, when performing amovement in the first direction during the exposure, in a plurality ofextended patterns which are spaced apart in the second direction inaccordance with the spacing of the marks in the second direction, andwhich are translated with respect to each other in the first direction,in accordance with the spacing of the marks with respect to each otherin the first direction. Similarly to measurement techniques describedabove, a position measurement at the measure side is performed of theextended patterns thus exposed onto the substrate along the firstdirection, the pattern position measurement being performed in the firstdirection. Thereby, use may be made of the fact that the different marksare spaced apart in the first direction. As a result thereof, an errorin the position of the extended pattern, the error in the second (Y)direction being provided in all the extended patterns, howevertranslated with respect to each other in the first (X direction). Again,similarly to the method described with reference to FIG. 19A, theextended patterns have been exposed onto the wafer at the expose side,while measurement takes place at the measure side of the lithographicapparatus. Measurements at the measure side are again performed for eachof the parallel extended patterns, whereby, pattern parts at a sameposition along the first direction (similarly to the line A-A in FIG.19A) are read out with a same positioning error at measure, while theseparts of the extended patterns have been exposed at different exposepositions (along the first direction). Thereby, positioning errors atthe measure side and at the expose side may be separated from eachother. This method may for example be employed to calibrate anunflattness of an interferometer mirror: the unflatness of theinterferometer mirror along the first (X) direction resulting in aposition deviation of the stage in e.g. the second direction. Due to thecontinuous character of the extended patterns, interpolation may beomitted, which may increase accuracy and may be result in a significanttime saving as compared to the discrete approach as described withreference to FIG. 19A. Furthermore, the need to combine the calibrationresults with other measurement techniques may be obviated.

Another calibration method is described below. Firstly, reference willbe made to a prior art method. In this prior art method, spaced apartmarks are provided on a mask (each mark may include one or more points).The marks exhibit a spacing in both the first and the second direction,such as for example the marks depicted in FIG. 20A, thereby preferablygenerating a cross shaped arrangement of marks, as symbolically depictedin the mask MA. Such calibration patterns are used for a so called“stitching” approach, whereby such a pattern is projected repetitivelyon the substrate, the substrate being displaced between successiveprojections over a distance slightly larger or slightly smaller than thespacing between neighboring points of the pattern. Preferably, thedistance is slightly larger than the spacing so as to avoid overlap incomplex setups or in large numbers of repetitions. As depicted in FIG.20A, where successive exposures are depicted below each other, a centermark of a following projected pattern is exposed adjacent to an outermark of the previously projected pattern. By a repetitive exposure ofsuch patterning, e.g. in a two dimensional arrangement on the wafer, arepetitive pattern of nearby clusters is created, the clustersconsisting of a center mark of a pattern and outer marks of adjacentpatterns. Each of such clusters consists of marks that have been exposed(i.e. projected) onto the substrate at different positions of the stateat the exposure side, while they can be read out at the measure side ofthe lithographic apparatus at nearly a single position. As now readoutof nearby marks can take place at measure at nearly the same stageposition, while the different nearby marks are from patterns on marksthat have been exposed at different stage positions at exposure, itbecomes possible to distinguish positioning errors at measure and atexpose from each other. Compared to the method described with referenceto FIG. 19A and FIG. 19B, the method described here offers thepossibility to calculate a two dimensional calibration map, alsoreferred to as a two dimensional calibration grid (making itparticularly suitable for encoder based stage position measurement),while the method described with reference to FIG. 19 may provide twosingle dimensional calibration data sets, also referred to as two singledimensional calibration grids. In this calibration technique describedwith reference to FIG. 20A, interpolation may be required for obtainingposition data in between the discrete measurements. Also, othermeasurement techniques may be applied in order to provide calibrationdata in a different spatial frequency range. The different measurementtechniques may then be combined.

A further calibration technique according to the invention will now bedescribed with reference to FIG. 20B In this method, use may be made ofa first pattern including a plurality (preferably 3, 4, or 5) of marksspaced apart in the second direction and a second pattern including aplurality (preferably 3, 4, or 5) of marks spaced apart in the firstdirection. The marks may but do not necessarily need to be diagonallyarranged similarly as disclosed with reference to FIG. 19B. The firstpattern is exposed onto the substrate, while moving the substrate withrespect to the mask in the first direction, thereby exposing the patternreferred to as 1. This process is repeated, for each repetition, thesubstrate having been displaced in the second direction over a distancepreferably slightly larger than a distance corresponding to the spacingbetween the marks of the first pattern. Thereby, a plurality of extendedpatterns are created, which extend along the first direction, asreferred to in FIG. 20B by 2 and 3. The same process is repeated usingthe second pattern. Thereby, during each exposure the substrate is movedin the second direction, while between successive exposures, thesubstrate is displaced in the first direction over a distance preferablyslightly larger than a distance corresponding to the spacing between themarks of the second pattern. On the substrate, as illustrated in FIG.20B (bottom figure), a pattern of parallel lines in both the first andsecond direction have been created thereby. This pattern again providesadjacent extended patterns, which have exposed at different positions ofthe substrate table at expose, which are however read out at measure atalmost the same position. Thereby, again, the position errors at exposeand at measure can be separated from each other. As compared to theconventional “stitching” approach, interpolation may be omitted, whichmay increase accuracy. Furthermore, the need to combine the calibrationresults with other measurement techniques may be obviated. Stillfurther, as significant time saving may be achieved.

Calibration Overview

In the below, a (stage) calibration method for a lithographic apparatusis disclosed, wherein use is made of embodiments of the calibrationmethods disclosed in this document. Firstly, a calibration method for alithographic apparatus having an interferometer based stage positionmeasurement is disclosed, followed by a discussion of a calibrationmethod for a lithographic apparatus having an encoder based stageposition measurement.

Generally, a wafer stage positioning system for lithography,interferometer or encoder based, requires a large, two dimensional rangeof at least a size of the substrate, e.g. 300 mm in X and Y. In general,6 degrees of freedom are measured.

An Interferometer position measurement system for such a large 2D XYrange may make use of mirrors extending in a direction perpendicular tothe interferometer beam, to keep track while moving in the directionperpendicular to the measurement direction. For an X measuringinterferometer this reflecting mirror is extended in the Y direction andvice versa. An X interferometer system regularly measures alsoadditional DOF, such as Rz and Ry by using additional parallelinterferometers. A same holds for Y measuring Rz and Rx. For theseadditional measurements similar with extended size, or paralleladditional reflecting surfaces are used. For Z direction,interferometers are used, interferometer beams of which being reflectedby a stage mirror to a reference mirror, such that chuck Z movementschange beam lengths, which can be detected. In general a interferometerbased stage position measurement system may make use of extended mirrorsfor all 6 degrees of freedom. These mirrors do not have the requiredflatness to fulfill the required grid accuracy.

In an embodiment, the stage calibration method may include:

In a first step, an X correction map as function of Y movement may bedetermined making use of the calibration method described with referenceto FIG. 19 B.

In a second step, a Y correction map as function of X may be determinedusing a same method.

In a third step, Rz as function of XY correction map may be determinedbased on the calibration methods disclosed in this document, making useof the double gridlines such as for example described with reference toFIG. 9A.

In a fourth step, Z as function of XY may be derived with thecalibration methods disclosed in this document, making use of thespecial purpose Z sensitive extended pattern as disclosed in thisdocument.

In a fifth step, Rx, and Ry maps as function of XY may be derived withthe calibration methods disclosed in this document, making use of thedouble special purpose Z sensitive extended gridlines as disclosed inthis document.

In a sixth step, a non orthogonal angle between X and Y mirrors may bedetermined with the calibration methods disclosed in this document,applying rotating 90 degree stitched patterns as disclosed in thisdocument.

The steps may, but not necessarily need to be performed in the listedorder.

Calibration of an Encoder based stage position measurement (both for theabove described stationary grid and movable grid encoder configurations)may be similar to the calibration of the interferometer based stateposition measurement configuration. The above described stagecalibration method may thus also be applied for interferometer basedstage position measurement.

The encoder grating may be used as a reference for the 6 degrees offreedom (DOF) stage position. This grating (grid) may be not ideal andnot flat, which may result in 6 DOF stage position errors.

It is generally remarked that in the stage calibration method, thecalibration described with reference to FIG. 20B may (e.g. in an encoderbased stage configuration) optionally take the place of the calibrationdescribed with reference to FIG. 19B.

Correction maps may be executed in a same way in an encoder mathematicalmodel connecting encoder measurements to 6 DOF stage position as in theinterferometer mathematical model, which connects interferometerreadings to 6 DOF stage positions.

General Remarks

In an embodiment the method according to the invention is arranged toimprove calibration of the encoder measurement system, and in particularan encoder including a grid. In order to calibrate such a specificencoder measurement system, a plurality of calibrations is performed inprior art:

Grid errors in a low spatial frequency can be calibrated by aconventional stitch approach wherein patterns are repeatedly projectedonto the substrate at a mutual distance. Furthermore, use may be made ofa high spatial frequency calibration wherein use is made of an inertiaof the stage: high spatial frequency grid errors will not be followed bythe stage when moving at a constant velocity with a low control loopbandwidth. Thirdly, a two dimensional expose grid calibration may beapplied, which may be aimed at reducing a chuck to chuck fingerprint andcompensate chuck dependent deformations due to substrate clamping, andmay also calibrate cooling induced grid deformations. Embodiments of theinvention alleviated these problems.

A more specific desire in prior art arrangements is to improvedcalibration for calibrating the stage position of the lithographicapparatus. Another desire is to provide an improved detection methodthat provides more information with respect to a certain surface area ofa substrate. It is desirable to improve the information density persurface area. It is further desirable to provide a detection methodresulting in information with respect to a large surface area in ashorter time span. At least some embodiments as described in theapplication improve prior art arrangements according to these desires.

Although in the above a specific example has been provided for adetection method and in particular a calibration of an encodermeasurement system of the stage, the detection and calibration asdescribed in this document may be applied to a stage having any type ofposition measurement system, such as interferometer, 1 dimensionalencoder, 2 dimensional encoder, interferometer/encoder combinations,inductive, capacitive, etc.

Although in the above a specific example has been provided for adetection method and in particular a calibration of an encodermeasurement system of the stage, the detection and calibration asdescribed in this document may be applied for controlling and correctinglens heating in a lithographic apparatus. In an embodiment an extendedpattern is formed repeatedly using the same pattern, while moving thesubstrate table with substrate. Repeatedly patterning results in lensheating and local deviations. A detection method, wherein a property ofthe extended pattern along its first direction is measured can provideinformation with respect to the deviations that are a result of lensheating and can be used for correcting for such lens heating.

The above calibration may be implemented in a lithographic apparatus bye.g. a suitable programming of a controller which controls the operationof the lithographic apparatus. Instead of or in addition to programmingby means of suitable programming instructions, any other way to make thecontroller arranged so as to have the calibration method performed, maybe applied (e.g. dedicated hardware, etc).

Inline tracking of all order is necessary to monitor common noise terms.

While the flank scan is performed the substrate table can also movethrough Z to compensate for an effect know as wafer induced coherenceoffset

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context ofsuch alternative applications, any use of the terms “wafer” or “die”herein may be considered as synonymous with the more general terms“substrate” or “target portion”, respectively. The substrate referred toherein may be processed, before or after exposure, in for example atrack (a tool that typically applies a layer of resist to a substrateand develops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithography atopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g. having a wavelength in therange of 5-20 nm), as well as particle beams, such as ion beams orelectron beams.

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

The descriptions above are intended to be illustrative, not limiting.Thus, it will be apparent to one skilled in the art that modificationsmay be made to the invention as described without departing from thescope of the clauses and claims set out below.

1. A calibration method for calibrating a stage position of a stage of alithographic apparatus, the method comprising: projecting, by aprojection system, a pattern of a patterning device onto a substrate;while moving the substrate relative to the patterning device in a firstdirection so as to extend the projected pattern in the first direction;measuring along the first direction the position of the extendedpattern, in a second direction perpendicular to the first direction; andderiving a calibration of the stage position from the measured positionof the extended pattern.
 2. The calibration method according to claim 1,wherein the measuring is performed by an alignment measurement system.3. The calibration method according to claim 2, wherein the patterncomprises a plurality of points, projected onto the substrate in thesecond direction so as to form a line pattern of a plurality of parallellines on the substrate.
 4. The calibration method according to claim 1,further comprising projecting the pattern on the substrate while movingthe substrate in the second direction so as to extend the projectedpattern in the second direction, and measuring along the seconddirection the position of the extended pattern in the first direction.5. The calibration method according to claim 4, wherein a raster ofextended patterns is projected on the substrate.
 6. The calibrationmethod according to claim 5, wherein a pitch of the raster is about 0.5millimeters
 7. The calibration method according to claim 4, furthercomprising the step of rotating the substrate over 90 degrees andrepeating the measuring along the extended pattern.
 8. The calibrationmethod according to claim 7, further comprising the step of translatingthe substrate and repeating the measuring.
 9. The calibration methodaccording to claim 8, wherein a second, translated pattern is projectedonto the substrate, the translation being accomplished by using thetranslated pattern.
 10. The calibration method according to claim 1,wherein the measuring is preceded by positioning the substrate along thesecond direction at a position of a near peak response zero crossing ofan output signal of the alignment sensor.
 11. The calibration methodaccording to claim 10, wherein the measuring is repeated, the repeatedmeasuring being preceded by positioning the substrate along the seconddirection at a position of a second near peak response zero crossing ofthe output signal of the alignment sensor.
 12. The calibration methodaccording to claim 1, wherein the moving of the substrate is performedat substantially a half of a maximum substrate scanning speed of thelithographic apparatus.
 13. The calibration method according to claim 1,wherein the pattern comprises a plurality of marks, spaced apart in thefirst direction and in the second direction, preferably diagonallyarranged in respect of the first and second direction so as to generatesubstantially parallel extended patterns on the substrate extendingalong the first direction and being spatially shifted in the seconddirection.
 14. The calibration method according to claim 1, wherein thepattern comprises a plurality of marks, spaced apart in the firstdirection, the projecting of the extended pattern being repeated, thesubstrate being displaced relative to the patterning device in thesecond direction between successive repetitions, the displacement over adistance corresponding to slightly larger than a spacing in the seconddirection between adjacent marks of the pattern, so as to provideneighboring, substantially parallel extended patterns.
 15. Alithographic apparatus comprising: an illumination system configured tocondition a radiation beam; a support constructed to support apatterning device, the patterning device being capable of imparting theradiation beam with a pattern in its cross-section to form a patternedradiation beam; a substrate table constructed to hold a substrate; aprojection system configured to project the patterned radiation beamonto a target portion of the substrate, and a control system to controlan operation of the lithographic apparatus, wherein the control systemis arranged to operate the lithographic apparatus to: project, by theprojection system, the pattern of the patterning device onto thesubstrate; while moving the substrate relative to the patterning devicein a first direction so as to extend the projected pattern in the firstdirection; measure along the first direction the position of theextended pattern in a second direction perpendicular to the firstdirection; and derive a calibration of the stage position from themeasured position of the extended pattern.